Patent
Laser light coupling into soi cmos photonic integrated circuit
TLDR
In this article, a hybrid laser is described for generating radiation, the hybrid laser (100) comprising an optical passive material (110) and an optical active material (120), and furthermore comprises a first optical waveguide (112) and optical laser components (114) comprising reflectors in the optical passive materials (110).Abstract:
A hybrid laser (100) is described for generating radiation, the hybrid laser (100) comprising an optical passive material (110) and an optical active material (120). The hybrid laser (100) furthermore comprises a first optical waveguide (112) and optical laser components (114) comprising reflectors in the optical passive material (110). The first optical waveguide (112) is adapted for coupling out radiation from the hybrid laser. The laser also comprises a second optical waveguide (122) defined in the optical active material (120). The optical laser components (114) comprise reflectors defining a cavity and furthermore are adapted for providing laser cavity confinement in the first optical waveguide (112) and the second optical waveguide (122). The second optical waveguide (122) thereby is positioned at least partly over the first optical waveguide (112) so that an evanescent coupling interface is defined between the second optical waveguide (122) and the first optical waveguide (112) and the evanescent coupling interface is positioned within the laser cavity.read more
Citations
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Patent
Method and system for hybrid integration of a tunable laser
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TL;DR: In this article, a tunable laser is defined as a substrate comprising a silicon material and a gain medium coupled to the substrate, which includes a compound semiconductor material and an output mirror.
References
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Journal ArticleDOI
Electrically pumped hybrid AlGaInAs-silicon evanescent laser
TL;DR: An electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding is reported.
Journal ArticleDOI
Nanophotonic Devices for Optical Interconnect
Dries Van Thourhout,Thijs Spuesens,Shankar Kumar Selvaraja,Liu Liu,Gunther Roelkens,Rajesh Kumar,Geert Morthier,Pedro Rojo-Romeo,Fabien Mandorlo,Philippe Regreny,Oded Raz,Christophe Kopp,Laurent Grenouillet +12 more
TL;DR: This work focuses on microdisk-laser-based transmitters and discusses improved design and advanced functionality including all-optical wavelength conversion and flip-flops and the performance of a wavelength selective detector.
Journal ArticleDOI
Single-Wavelength Silicon Evanescent Lasers
Alexander W. Fang,Matthew N. Sysak,Brian R. Koch,Richard Jones,Erica Lively,Ying-Hao Kuo,Di Liang,Omri Raday,John E. Bowers +8 more
TL;DR: In this paper, the authors present a single-wavelength silicon evanescent laser that utilizes distributed feedback, distributed Bragg reflector (DBR), and sampled grating (SG) DBR laser topographies.
Patent
Transmitter-receiver with integrated modulator array and hybrid bonded multi-wavelength laser array
TL;DR: In this paper, a plurality of optical waveguides is assumed to be disposed in a single layer of semiconductor material, and the gain medium-semiconductor material interface is defined along each of the optical waveguide.
Proceedings ArticleDOI
Hybrid silicon lasers
Gunther Roelkens,Yannick De Koninck,Shahram Keyvaninia,Stevan Stankovic,M. Tassaert,Marco Lamponi,Guang-Hua Duan,Dries Van Thourhout,Roel Baets +8 more
TL;DR: In this paper, hybrid silicon lasers based on bonded III-V layers on silicon are discussed with respect to the challenges and trade-offs in their design and fabrication and specific designs that combine good light confinement in the gain layer with good spectral control provided by grating structures patterned in silicon.