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Proceedings ArticleDOI

Leveraging Systematic Unidirectional Error-Detecting Codes for fast STT-MRAM cache

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TLDR
Efficient Systematic Unidirectional Error-Detecting Code (SEDC) is proposed to be adopted instead of conventional ECC combined with proper cache access mechanism to fetch correct data in case of error detection that makes STT-MRAM viable for fast-caches compared to the existing solutions.
Abstract
Spin Transfer Torque Magnatic Random Access Memory (STT-MRAM) has the potential to become a universal memory technology due to its various attractive features such as non-volatility, high density, CMOS compatibility and zero leakage However, STT-MRAM suffers from high write latency and poor reliability compared to SRAM This is primarily due to its stochastic nature of switching, which makes it not suitable for fast caches such as L1 The use of robust Error Correction Coding (ECC) with multiple bit correction capability to optimize the write margin and reliability results in large decoding latencies and large number of check bits In this paper, we propose a new solution to exclude the high costs of using ECC in terms of decoding latency and storage overhead to be able to use STT-MRAM for fast caches We exploit the fact that STT-MRAM poses asymmetric errors due to the nature of Magnetic Tunnel Junction (MTJ) cell, which makes ECC a pessimistic solution to address such errors Therefore, efficient Systematic Unidirectional Error-Detecting Code (SEDC) is proposed to be adopted instead of conventional ECC combined with proper cache access mechanism to fetch correct data in case of error detection Our proposed approach provides orders of magnitude better reliability and considerable performance improvement that makes STT-MRAM viable for fast-caches compared to the existing solutions

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Citations
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Journal ArticleDOI

A Survey of Test and Reliability Solutions for Magnetic Random Access Memories

TL;DR: An up-to-date and practical coverage of MRAM test and reliability solutions existing in the literature is provided, as well as functional fault models used for MRAM.
Journal ArticleDOI

VAET-STT: Variation Aware STT-MRAM Analysis and Design Space Exploration Tool

TL;DR: A tool which can quantify the effect of stochasticity and process variations from the cell level to the overall memory system and perform a variation-aware design space exploration and memory configuration optimization for energy or performance while meeting reliability constraints is developed.
Proceedings ArticleDOI

A cross-layer adaptive approach for performance and power optimization in STT-MRAM

TL;DR: This work proposes an adaptive write current scaling technique that adjusts the write current, and hence the write latency and energy based on the performance needs at run-time, and evaluates the efficiency on SPEC2000 applications for STT-MRAM-based L1 and L2-cache levels.
Journal ArticleDOI

REACT: Read/Write Error Rate Aware Coding Technique for Emerging STT-MRAM Caches

TL;DR: The proposed REACT reduces the probability of read disturbance and write failure up to 58% and 71%, respectively by imposing negligible area, power, and performance overheads (less than 1%).
References
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Book

Algebraic Coding Theory

TL;DR: This is the revised edition of Berlekamp's famous book, "Algebraic Coding Theory," originally published in 1968, wherein he introduced several algorithms which have subsequently dominated engineering practice in this field.
Journal ArticleDOI

NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Nonvolatile Memory

TL;DR: NVSim is developed, a circuit-level model for NVM performance, energy, and area estimation, which supports various NVM technologies, including STT-RAM, PCRAM, ReRAM, and legacy NAND Flash and is expected to help boost architecture-level NVM-related studies.
Journal ArticleDOI

SPEC CPU2000: measuring CPU performance in the New Millennium

J.L. Henning
- 01 Jul 2000 - 
TL;DR: CPU2000 as mentioned in this paper is a new CPU benchmark suite with 19 applications that have never before been in a SPEC CPU suite, including high-performance numeric computing, Web servers, and graphical subsystems.
Journal ArticleDOI

Moore's law: the future of Si microelectronics

TL;DR: In this article, the authors describe the history of the microelectronics industry and its explosive growth driven by two factors: Noyce and Kilby inventing the planar integrated circuit (PIC) and the advantageous characteristics that result from scaling (shrinking) solid-state devices.
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