Proceedings ArticleDOI
Light-trapping structures based on low-melting point metals for thin-film solar cells
Qiang Hu,Jian Wang,Yong Zhao,Dejie Li +3 more
- pp 000874-000876
Reads0
Chats0
TLDR
In this paper, a new way based on lowmelting point metals is provided to fabricate light-trapping structures, and three classic metals, Al, Bi and Sn, are utilized to introduce textured topography.Abstract:
In this article, a new way based on low-melting-point metals is provided to fabricate light-trapping structures. Three classic metals, Al, Bi and Sn, are utilized to introduce textured topography. The fabrication technologies are quite simple that traditional evaporation is used here. The obtained textured Bi and Sn coatings are oxidized in air to be Bi 2 O 3 and SnO 2 . Root-mean-roughness of over 100nm can be obtained, 120nm, 150nm and 142nm for Al, Bi 2 O 3 and SnO 2 , respectively. Angle resolved scattering (ARS) of the coatings dependence on light scattering in air is compared and all the three coatings can scatter the incident light into large angles effectively. This indicates good light absorption in the subsequently deposited absorber layer. The three coatings are used as back reflectors and different silicon thickness from 300nm to 1200nm are sputtered on. The amorphous silicon is recrystallized by Cu induce crystallization. The reflectivity of the samples is tested by a spectrometer with an integrating sphere and average reflectivity (R a ) in the wavelength region from 400nm to 1100nm is discussed to reveal the light-trapping efficiency. The results presents that with only 300nm thick silicon layer, the R a can be limited to 14% for the SnO 2 coating. The R a of Bi 2 O 3 coated structure changes little when the silicon thickness changes between 480nm and 1200nm, and with only 480nm thick silicon layer, the R a can be limited to 12%. For the textured Al coating, an optimal silicon thickness exists as 840nm and the Ra can be limited to nearly 10% at this point. We believe that the technologies are suitable for thin film solar cells for mass production.read more
Citations
More filters
References
More filters
Journal ArticleDOI
Plasmonics for improved photovoltaic devices
Harry A. Atwater,Albert Polman +1 more
TL;DR: Recent advances at the intersection of plasmonics and photovoltaics are surveyed and an outlook on the future of solar cells based on these principles is offered.
Journal ArticleDOI
TCO and light trapping in silicon thin film solar cells
TL;DR: In this article, the effect of aluminum-doped zinc oxide (ZnO:Al) front contact and the role of the back reflector on the performance of thin-film silicon solar cells is investigated.
Journal ArticleDOI
Modified Thornton model for magnetron sputtered zinc oxide: film structure and etching behaviour
TL;DR: In this article, ZnO:Al films were prepared on glass substrates with different sputter techniques from ceramic and metallic targets using a wide range of deposition parameters and the correlation of sputter parameters, film growth and structural properties was discussed in terms of a modified Thornton model.
Journal ArticleDOI
Erratum: Plasmonics for improved photovoltaic devices
Harry A. Atwater,Albert Polman +1 more
TL;DR: In Fig. 1a of the version of this Review originally published, the graph labelled '2- μm-thick Si wafer' is that for a 10-μm-Thick SiWafer, and the corrected figure is shown below.
Journal ArticleDOI
Enhancement of light trapping in thin-film hydrogenated microcrystalline Si solar cells using back reflectors with self-ordered dimple pattern
TL;DR: In this article, a unique substrate with a periodic dimple pattern has been developed by utilizing anodic oxidation of Al as a self-ordering process for light-trapping effect of textured back surface reflectors in thin-film Si solar cells.