Journal ArticleDOI
Low-loss high-power static induction thyristors for complementary circuits
TLDR
In this paper, a dual-sided proton-irradiation technique and a technique that combines anode shorting and proton irradiation were proposed to obtain low-loss high-power static induction thyristors (SIThys).Abstract:
Two techniques are proposed to obtain low-loss high-power static induction thyristors (SIThys). A dual-sided proton-irradiation technique and a technique that combines anode shorting and proton irradiation both provide n-channel and p-channel SIThys with high blocking voltages and a good trade-off between switching times and forward voltage drops. In particular, dual-sided proton irradiation provides a SIThy with forward and reverse blocking voltage higher than 1 kV. An n-channel SIThy with an n-region thickness of 230 mu m has shown a rise time of 0.24 mu s, a storage time of 0.19 mu s, a fall time of 0.08 mu s, and a forward voltage drop of 3.0 V at an anode current of 50 A (125 A/cm/sup 2/). The effect of the combined technique is much the same as that of the dual-sided proton irradiation. Using the dual-sided proton irradiation, a p-channel SIThy with a p-region thickness of 430 mu m has shown a rise time of 0.5 mu s, a storage time of 0.1 mu s, a fall time of 0.3 mu s, and a forward voltage drop of 6.0 V at an anode current of 4 A (110 A/cm/sup 2/). Using the proposed techniques, a complementary high-power control circuit with low loss and switching frequency higher than a few hundred kilohertz can be realized. >read more
Citations
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Journal ArticleDOI
Einsatz von Protonenbestrahlung in der Technologie der Leistungshalbleiter
W. Wondrak,W. D. Nowak,D. Silber +2 more
TL;DR: In this article, Protonenbestrahlung konnen Rekombinationszentren in Siliziumbauelementen in definierter Tiefe erzeugt werden.
Journal ArticleDOI
Irradiation-then-anneal processing to improve BSIT performance
TL;DR: In this paper, the effect of different irradiation dose and annealing temperature combinations on the electrical characteristics of high voltage power static induction transistors (BSIT's) is explored.
Journal ArticleDOI
Der feldgesteuerte Thyristor (FCTh) — ein Leistungsschalter mit weitgehend optimalen Eigenschaften für den Einsatz im oberen Leistungsbereich
H. Grüning,J. Voboril +1 more
TL;DR: In this article, the Recessed Gate (Verigrid)-Technologie, damit Breite, Hohe, Dotierung und Kontaktierung der Steuerfinger der FCThs unabhangig voneinander optimiert werden konnen und eine extrem niederinduktive Ansteuerung zum schnelle und homogenen Ausschalten der FCTHs.
Journal ArticleDOI
A new static induction thyristor with high forward blocking voltage and excellent switching performances
TL;DR: In this article, a new static induction thyristor (SITH) with a strip anode region and p− buffer layer structure (SAP−B) was successfully designed and fabricated.
Journal ArticleDOI
Effect of irradiation and annealing conditions on power transistor performance
TL;DR: In this paper, it was shown that to simultaneously achieve requirements of dynamic (storage time) and static (on-resistance, peak drain current) power transistor characteristics, an irradiation/anneal processing cycle may be used.
References
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Journal ArticleDOI
Experimental study on current gain of BSIT
TL;DR: In this article, a means to improve the current gain h FS of the BSIT in a high drain current region has been derived from an experimental study about the dependency of the h FS versus drain current relationship on the channel width, the gate junction depth, and the impurity concentration in the n-high resistivity drain region.
Journal ArticleDOI
Ultrahigh-voltage high-current gate turn-off thyristors
Abstract: High-power GTO's with ratings of 2500 V . 2000 A have been developed, and a 4500 V . 2000 A GTO was trial fabricated and performance tested, for use in traction motor control equipment. Their low ON-state voltage was attained by applying a unique anode emitter shorting structure which does not require doping of a lifetime killer such as gold to obtain suitable GTO characteristics. Their high interrupt current was obtained by introducing a ring-shaped gate structure which has uniform operation between many segments in the devices during turn-off process.
Journal ArticleDOI
Shorter turn-off times in insulated gate transistors by proton implantation
TL;DR: In this paper, a narrow region of low carrier lifetime was created at 100-µm depth by implanting 3.1-MeV protons, and an increase in forward voltage drop with decreasing turnoff time was observed.
Journal ArticleDOI
Very High Speed Static Induction Thyristor
TL;DR: In this article, the static induction thyristor (SIThy) is irradiated by 2-MeV protons to improve the switching speed as a result of local carrier lifetime control.
Proceedings ArticleDOI
Normally-off type high speed SI-Thyristor
TL;DR: In this article, the design, fabrication, and characterization of a normally off type static induction thyristor (SIThy) with a surface gate structure were made with an intention to use it in high speed switching at high currents.