Journal ArticleDOI
Metalorganic chemical vapor deposition of oriented ZnO films over large areas
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TLDR
A metalorganic chemical vapor deposition process for preparing c-axis-oriented ZnO films in a simple system of the type commercially available for SiO2 deposition is described in this paper.Abstract:
A metalorganic chemical vapor deposition process for preparing c‐axis‐oriented ZnO films in a simple system of the type commercially available for SiO2 deposition is described. The resulting layers are highly uniform in thickness and adhere to a variety of substrates. Film properties and structure are described briefly.read more
Citations
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Journal ArticleDOI
A comprehensive review of zno materials and devices
Ümit Özgür,Ya. I. Alivov,C. Liu,A. Teke,Michael A. Reshchikov,Seydi Doğan,Vitaliy Avrutin,Sang-Jun Cho,Hadis Morkoç +8 more
TL;DR: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature.
Journal ArticleDOI
Textured aluminum‐doped zinc oxide thin films from atmospheric pressure chemical‐vapor deposition
Jianhua Hu,Roy G. Gordon +1 more
TL;DR: In this article, aluminum-doped zinc oxide films have been deposited on soda lime glass substrates from diethyl zinc, triethyl aluminum, and ethanol by atmospheric pressure chemical-vapor deposition in the temperature range 367-444°C.
Journal ArticleDOI
Textured fluorine-doped ZnO films by atmospheric pressure chemical vapor deposition and their use in amorphous silicon solar cells
Jianhua Hu,Roy G. Gordon +1 more
TL;DR: Fluorine-doped ZnO films were deposited on soda lime glass by atmospheric pressure chemical vapor deposition at temperatures from 350 to 470 °C by using diethyl zinc, ethanol and hexafluoropropene as precursors as discussed by the authors.
Journal ArticleDOI
Atmospheric pressure chemical vapor deposition of gallium doped zinc oxide thin films from diethyl zinc, water, and triethyl gallium
Jianhua Hu,Roy G. Gordon +1 more
TL;DR: In this article, the gallium doped zinc oxide films have been deposited in the temperature range 150 to 470°C from 0.05% diethyl zinc, 0.8% water, and various triethyl gallium concentrations.
Journal ArticleDOI
Epitaxial growth of ZnO films
TL;DR: In this article, the authors review the growth of ZnO epitaxial films by PLD, MBE, MOCVD and sputtering under their various aspects, substrates, precursors, reaction chemistry, assessment of the layers etc.
References
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Journal ArticleDOI
Properties of zinc oxide films prepared by the oxidation of diethyl zinc
A. P. Roth,D. F. Williams +1 more
TL;DR: In this article, a study of oxygen chemisorption at grain boundaries confirms the importance of grain boundary effects in ZnO polycrystalline films, which have a conductivity varying from 10−2 to 50 Ω−1 cm−1.
Journal ArticleDOI
Theory of interdigital couplers on nonpiezoelectric substrates
G. S. Kino,R. S. Wagers +1 more
TL;DR: In this paper, the authors used an interdigital electrode structure overlaid with a piezoelectric film for the excitation of surface acoustic waves on a non-piezolectric material.
Journal ArticleDOI
Growth of Epitaxial ZnO Thin Films by Organometallic Chemical Vapor Deposition
TL;DR: In this article, the reaction of diethylzinc with,, and oxidizing gas systems, has been studied using scanning electron microscopy (SEM), reflection electron diffraction (RED), and surface acoustic wave techniques.
Journal ArticleDOI
Zinc-oxide thin-film surface-wave transducers
TL;DR: In this paper, the authors summarized a body of knowledge which has been developed on the characteristics of transducer quality ZnO film layers, and focused attention on those sputtering parameters and microstructural properties which characterize a superior surface-wave transducers.
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