Journal ArticleDOI
Metalorganic chemical vapor deposition of ZnSe films on glass and GaAs(111) substrates
TLDR
In this paper, the authors studied the low-temperature growth and doping of polycrystalline ZnSe by MOCVD using ditertiary-butylselenide (DtBSe) and dimethylzinc-triethylamine (DMZn-TEN) precursors.About:
This article is published in Journal of Crystal Growth.The article was published on 1998-07-01. It has received 8 citations till now. The article focuses on the topics: Thin film & Copper indium gallium selenide solar cells.read more
Citations
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Journal ArticleDOI
Fabrication of transition metal selenides and their applications in energy storage
TL;DR: In this article, transition metal selenides (TMSs) are proposed as potential materials for electrochemical energy storage systems and their properties, preparation methods, and applications are discussed.
Journal ArticleDOI
Cu(In,Ga)Se2 solar cells with a ZnSe buffer layer: interface characterization by quantum efficiency measurements
F. Engelhardt,L. Bornemann,Marc Köntges,Th. Meyer,J. Parisi,E. Pschorr-Schoberer,B. Hahn,W. Gebhardt,W. Riedl,Uwe Rau +9 more
TL;DR: In this article, the authors investigated a large series of solar cells with varied thickness of both types of buffer layers by means of quantum efficiency measurements in equilibrium and under light and voltage bias, and the characterization of the devices concentrates on the collection of photogenerated holes from the buffer layer.
Journal ArticleDOI
Cd-free buffer layers for CIGS solar cells prepared by a dry process
Susanne Siebentritt,Timon Kampschulte,A. Bauknecht,Ulf Blieske,Wolfgang Harneit,Ulrich Fiedeler,Martha Ch. Lux-Steiner +6 more
TL;DR: In this article, photo assisted MOCVD was used to achieve deposition temperatures well below 300°C and deposition times not much longer than 3 min. Higher temperatures and longer deposition times lead to absorber degradation.
Journal ArticleDOI
Optimum growth of ZnSe film by molecular beam deposition
TL;DR: In this article, the properties of polycrystalline ZnSe films are characterized by photoluminescence spectra and the dependence of film properties on various substrate temperatures and Se/Zn BEP ratios has been discussed in detail.
Journal ArticleDOI
Investigation on the properties of molecular beam deposited ZnSe films
TL;DR: In this article, the best growth condition was identified by analyzing characteristics such as the full width at half-maximum and peak intensity of the (111) preferred orientation in X-ray diffraction patterns.
References
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Journal ArticleDOI
Optical Properties of ZnSe Epilayers and Films
TL;DR: Caracterisation optique et physique de ZnSe et al. as mentioned in this paper describe des macles et des deformations thermoelastiques d'une couche ZNSe sur un substrat.
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Orientation dependence of GaAs growth in low-pressure OMVPE
TL;DR: In this paper, the growth rate of GaAs OMVPE was found to be strongly dependent on the crystallographic orientation and Si doping, and the Si incorporation using disilane as a dopant depends on the crystal orientation and the growth temperature.
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Influence of growth non-stoichiometry on optical properties of doped and non-doped ZnSe grown by chemical vapour deposition
E. Krause,H. Hartmann,J. Menninger,Axel Hoffmann,Ch. Fricke,R. Heitz,B. Lummer,V. Kutzer,I. Broser +8 more
TL;DR: In this article, the optical properties of poly-ZnSe are studied by means of time-integrated and time-resolved photoluminescence (PL) as well as spatially resolved cathodoluminecence (CL).
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Preparation and characterization of close-spaced vapour transport thin films of ZnSe for heterojunction solar cells
TL;DR: In this paper, thin films of ZnSe were deposited onto several types of substrates, including glass coated with indium tin oxide and semitransparent metal layers, using the close-spaced vapour transport (CSVT) method.
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Low-pressure metalorganic vapor phase epitaxy of ZnSe-based light emitting diodes
TL;DR: In this paper, the growth and p-and n-doping of ZnSe with low-pressure metalorganic vapor phase epitaxy was performed on semi-insulated and highly doped GaAs substrates at a growth temperature of 340°C.