Patent
Method of forming a barrier layer between a silicon substrate and an aluminum electrode of a semiconductor device
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TLDR
In this paper, a titanium nitride barrier layer of 50 to 200 nm in thickness is fabricated between a silicon substrate and an aluminum electrode layer of an IC device by reactive sputtering performed in a mixed gas including oxygen in a proportion of 1 to 5% by volume relative to other gases, comprising an inert gas and a reactive gas, providing the temperature of the silicon substrate at 350° to 550° C.Abstract:
A titanium nitride barrier layer of 50 to 200 nm in thickness is fabricated between a silicon substrate and an aluminum electrode layer of an IC device by reactive sputtering performed in a mixed gas including oxygen in a proportion of 1 to 5% by volume relative to other gases, comprising an inert gas and a reactive gas, providing the temperature of the silicon substrate at 350° to 550° C. during the reactive sputtering, so that the product has a failure rate, indicating the property of preventing mutual diffusion of silicon and aluminum atoms from occurring, of less than 1% and a resistivity less than 100 μΩ.cm.read more
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Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer
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Journal ArticleDOI
Properties and microelectronic applications of thin films of refractory metal nitrides
TL;DR: In this article, the preparation of thin films of refractory metal nitrides in microelectronics is discussed and various applications in silicon-integrated circuit technology are described.
Patent
Method for the production of a titanium/titanium nitride double layer
TL;DR: In this paper, a method for producing consecutive layers of titanium and titanium nitride on a substrate to produce a contact and barrier layer between aluminum and silicon surfaces or silicide surfaces utilizing cathode sputtering in a one chamber magnetron sputtering system was proposed.