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Patent

Method of forming an integrated circuit toroidal inductor

TLDR
In this paper, a high quality factor (Q) spiral and toroidal inductor and transformer are disclosed that are compatible with silicon very large scale integration (VLSI) processing, consume a small IC area, and operate at high frequencies.
Abstract
High quality factor (Q) spiral and toroidal inductor and transformer are disclosed that are compatible with silicon very large scale integration (VLSI) processing, consume a small IC area, and operate at high frequencies. The spiral inductor has a spiral metal coil deposited in a trench formed in a dielectric layer over a substrate. The metal coil is enclosed in ferromagnetic liner and cap layers, and is connected to an underpass contact through a metal filled via in the dielectric layer. The spiral inductor also includes ferromagnetic cores lines surrounded by the metal spiral coil. A spiral transformer is formed by vertically stacking two spiral inductors, or placing them side-by-side over a ferromagnetic bridge formed below the metal coils and cores lines. The toroidal inductor includes a toroidal metal coil with a core having ferromagnetic strips. The toroidal metal coil is segmented into two coils each having a pair of ports to form a toroidal transformer.

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References
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Patent

Method for designing high-Q inductors in silicon technology without expensive metalization

TL;DR: In this paper, a software assisted iterative technique is used to design a high Q inductor for implementation in multiple metalization levels in conventional integrated circuit technology, and the inductor turns utilize the multiple metalisation levels to reduce inductor resistance.
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High-Q inductors in silicon technology without expensive metalization

TL;DR: A monolithic high-Q inductor structure is formed with multiple metalization levels in a conventional integrated circuit technology in which inductor turns utilize these multiple levels to reduce the inductor resistance as mentioned in this paper.
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Miniature inductor for integrated circuits and devices

TL;DR: In this article, a helical electrical path which spirals about a core portion of the magnetic material in the second layer is constructed by depositing magnetic armature material to partially overlap a sacrificial support base.
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Inductive structures for semiconductor integrated circuits

TL;DR: In this paper, a planar spiral winding is disposed on the surface of a substrate and an electrical connection to the internal end of the spiral is made through electrically conducting vias passing through the substrate.
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Method of making a multilayer monolithic magnet component

TL;DR: In this article, magnetic components are fabricated as monolithic structures using multilayer co-fired ceramic tape techniques, and windings are formed using screen printed conductors connected through the multi-layer structure by conducting vias.
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