Journal ArticleDOI
Microscopic Manipulation of Homojunction Band Lineups
Marino Marsi,S. La Rosa,Yeukuang Hwu,F. Gozzo,Carlo Coluzza,Alfonso Baldereschi,Giorgio Margaritondo,J. T. McKinley,Stefano Baroni,Raffaele Resta +9 more
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TLDR
In this paper, the theoretical prediction that the band structures on the opposite sides of a homojunction can be artificially displaced in energy with respect to each other by means of double intralayers of atomiclike thickness was tested.Abstract:
We tested the theoretical prediction that the band structures on the opposite sides of a homojunction can be artificially displaced in energy with respect to each other by means of double intralayers of atomiclike thickness, producing band discontinuities of potential interest for practical applications. Evidence of such discontinuities was found when Ga‐As, Al‐As, Ga‐P, or Al‐P intralayers were inserted between Si and Si or Ge and Ge.read more
Citations
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Journal ArticleDOI
Heterojunction band offset engineering
TL;DR: In this paper, the authors present a survey of new theoretical models of semiconductor heterojunctions and illustrate their newfound ability to derive from first principles rules of heterojunction behavior.
Journal ArticleDOI
Band engineering at interfaces : Theory and numerical experiments
TL;DR: This review presents a theoretical approach to the band-line-up problem and discusses its application to prototypical systems, with emphasis on ab initio computations and on theoretical models derived from first-principles numerical experiments.
Journal ArticleDOI
Direct Observation of Dislocation Core Structures in CdTe/GaAs(001).
TL;DR: Core structures of 60-degree and Lomer dislocations in the CdTe/GaAs(001) system have been obtained by the application of maximum-entropy analysis to Z-contrast images obtained in a 300-kilovolt scanning transmission electron microscope.
Journal ArticleDOI
Mott-Hubbard transition in V2O3 revisited
Philipp Hansmann,Philipp Hansmann,Alessandro Toschi,Giorgio Sangiovanni,Giorgio Sangiovanni,Tanusri Saha-Dasgupta,Stefano Lupi,Marino Marsi,Karsten Held +8 more
TL;DR: In particular, the old paradigm of a doping-pressure equivalence does not hold, and there is a microscale phase separation for Cr-doped V2O3.
Journal ArticleDOI
Mott–Hubbard transition in V2O3 revisited
Philipp Hansmann,Philipp Hansmann,Alessandro Toschi,Giorgio Sangiovanni,Giorgio Sangiovanni,Tanusri Saha-Dasgupta,Stefano Lupi,Marino Marsi,Karsten Held +8 more
TL;DR: In particular, the old paradigm of a doping-pressure equivalence does not hold, and there is a microscale phase separation for Cr-doped V2O3.
References
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Journal ArticleDOI
Polar heterojunction interfaces
TL;DR: In this paper, a study of heterojunction interface geometry based on their measured differences in $3d$ corestate binding energies for germanium and gallium at Ge-GaAs heterojunctions of different crystallographic orientations is reported.
Book
Heterojunction Band Discontinuities: Physics and Device Applications
TL;DR: In this article, the energy gap theory of solids has been studied in the context of semiconductors and photo-electronic devices, and the energy band theory has been proposed.
Journal ArticleDOI
Dipole-induced changes of the band discontinuities at the SiO2-Si interface.
TL;DR: This work presents a new generation of synchrotron arrays that combine high-performance liquid chromatography with high-resolution 3D image recognition and provide real-time information about the response of the immune system to laser-spot assisted demolition.
Journal ArticleDOI
Tuning AlAs-GaAs band discontinuities and the role of Si-induced local interface dipoles.
Lucia Sorba,Gvido Bratina,Giacomo Ceccone,A. Antonini,JF Walker,Miroslav Micovic,Alfonso Franciosi +6 more
TL;DR: La presence des couches minces ordonnees de Si dans la region de l'interface des heterostructures AlAs-GaAs regle la discontinuite de the bande de valence sur l'intervalle 0,02-0,78 eV.
Journal ArticleDOI
Heterojunction Band Discontinuity Control by Ultrathin Intralayers
TL;DR: In this article, the authors present evidence that the band lineup at a semiconductor-semiconductor heterojunction interface can be controlled by an ultrathin metal intralayer.