Journal ArticleDOI
Modeling and simulation of chemically amplified electron beam, x-ray, and EUV resist processes
TLDR
In this article, the acid distribution around an ionization point with a typical parameter set is calculated for post-optical lithography with chemically amplified electron beam (EB), x-ray, and EUV resists.Abstract:
With the shrinkage of feature sizes, ever precise accuracy has been required for process simulators because of the importance of nanoscale resist topography such as line edge roughness. Formation processes of latent images in chemically amplified electron beam (EB), x-ray, and EUV resists are different from both chemically amplified photoresists used in optical lithography and conventional, nonchemically amplified EB resists. A new simulation scheme precisely based on reaction mechanisms is necessary to reproduce resist patterns for the postoptical lithographies. We proposed a method to simulate electron dynamics in chemically amplified resists and to calculate the acid distribution around an ionization point with a typical parameter set.read more
Citations
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Journal ArticleDOI
Radiation Chemistry in Chemically Amplified Resists
Takahiro Kozawa,Seiichi Tagawa +1 more
TL;DR: In this article, the authors review the radiation chemistry of materials related to chemically amplified resist materials and discuss the imaging mechanisms from energy deposition to proton migration in resist materials are discussed.
Journal ArticleDOI
Acid distribution in chemically amplified extreme ultraviolet resist
TL;DR: In this paper, the authors simulated acid generation induced by EUV photons in poly(4-hydroxystyrene) with 10wt% triphenylsulfonium triflate and clarified the extent of resolution blur in latent acid images and theoretical acid generation efficiency.
Journal ArticleDOI
Acid generation efficiency in a model system of chemically amplified extreme ultraviolet resist
TL;DR: In this paper, the number of acid molecules generated by an extreme ultraviolet (EUV) photon was evaluated using an acid sensitive dye, and the observed acid yield was well explained by the ionization model for acid generation originally proposed for chemically amplified electron beam resists.
Journal ArticleDOI
Study of Acid-Base Equilibrium in Chemically Amplified Resist
TL;DR: In this article, the acid-base equilibrium was reached in a model system of chemically amplified resists with a typical backbone polymer, poly(4-hydroxystyrene), without elevating the temperature of the films.
Journal ArticleDOI
Dependence of Absorption Coefficient and Acid Generation Efficiency on Acid Generator Concentration in Chemically Amplified Resist for Extreme Ultraviolet Lithography
TL;DR: In this article, the number of acid molecules generated in a model system of chemically amplified extreme ultraviolet (EUV) resists [poly(4-hydroxystyrene) film dispersed with triphenylsulfonium-triflate (TPS-tf)] was evaluated using an acid sensitive dye.
References
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Journal ArticleDOI
Radiation-Induced Acid Generation Reactions in Chemically Amplified Resists for Electron Beam and X-Ray Lithography
TL;DR: In this article, the radiation-induced reactions of onium salts in some kinds of solutions and model compound solutions of chemically amplified electron beam (EB) and X-ray resists have been studied by means of picosecond and nanosecond pulse radiolysis.
Journal ArticleDOI
Photochemistry of diaryliodonium salts
John L. Dektar,Nigel P. Hacker +1 more
TL;DR: Les produits formes par photolyse directe ou photosensibilisee sont: les dimethyl-4,4'-, -2,4'- and -3,4', and les dimmethyl-2, 4'-, and 2, 4'-iodo-2-and -3-biphenyles as mentioned in this paper.
Journal ArticleDOI
Development of Positive Photoresists
TL;DR: In this paper, the authors proposed a mechanism for the development of positive optical photoresists, leading to the derivation of a development rate equation, which is based on a postulated reaction mechanism.
Journal ArticleDOI
Energy dissipation in a thin polymer film by electron beam scattering
TL;DR: In this article, Monte Carlo calculations have been performed to determine the spatial distribution of energy dissipated in a 4000-A-thick film of polymethyl methacrylate (PMMA), due to an incident electron beam.
Journal ArticleDOI
Proton Dynamics in Chemically Amplified Electron Beam Resists
Hiroki Yamamoto,Takahiro Kozawa,Atsuro Nakano,Kazumasa Okamoto,Yukio Yamamoto,Tomoyuki Ando,Mitsuru Sato,Hiroji Komano,Seiichi Tagawa +8 more
TL;DR: In this article, the proton dynamics of poly(4-hydroxystyrene) (PHS) films were investigated using Coumarin 6 (C6), and acid density was 0.022 nm-3 at the exposure dose of 10 µC cm-2 (75 keV electron beam).