Modeling of electromechanically-induced failure of passivated metallic thin films used in device interconnections

TLDR: In this article, a theoretical analysis of the failure of metallic thin films used for device interconnections in integrated circuits is presented based on surface mass transport modeling coupled with the electrostatic and elastic deformation problems in the metallic films.

Abstract: A theoretical analysis is presented of the failure of metallic thin films used for device interconnections in integrated circuits. Failure is mediated by void dynamics, which is driven by surface electromigration and processing related residual thermal stresses in the films. The analysis is based on surface mass transport modeling coupled strongly with the electrostatic and elastic deformation problems in the metallic films. Special emphasis is placed on the combined effects on void dynamics of anisotropy both in surface diffusivity along a void surface and in the applied stress tensor. A systematic parametric study is carried out based on self-consistent numerical simulations of surface morphological evolution. Void dynamics is analyzed and results are presented for void morphological stability in terms of critical stress levels as a function of stress state and surface mobility anisotropy. Finally, the role of plastic deformation is discussed around crack-like features emanating from void surfaces in ductile metallic films based on results of molecular-dynamics simulations in Cu.