Journal ArticleDOI
Monolithic integrated InxGa1−xAs Schottky‐barrier waveguide photodetector
TLDR
In this article, high-purity GaAs planar waveguides using a selective epitaxial growth process were used for detection in the 0.9-1.06-μm wavelength range.Abstract:
InxGa1−xAs Schottky‐barrier diodes for detection in the 0.9–1.06‐μm wavelength range have been incorporated in high‐purity GaAs planar waveguides using a selective epitaxial growth process. A quantum efficiency of 60% at 1.06 μm has been obtained for these detectors, and current gain has been observed.read more
Citations
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Journal ArticleDOI
GaAs integrated optical circuits by wet chemical etching
TL;DR: In this article, an integrated optical circuit containing a laser, passive waveguide, and extra-cavity detector is described, which is fabricated from Al x Ga 1-x As layers grown by liquid-phase epitaxy.
Journal ArticleDOI
Monolithic optoelectronic integration: A new component technology for lightwave communications
TL;DR: It is concluded that the pursuit of optoelectronic integration will lead to an increase in device functionality, an improvement in performance, and a reduction in cost of the integrated device as compared with its hybrid counterpart.
Journal ArticleDOI
III-V alloys for optoelectronic applications
TL;DR: In this paper, the energy bandgap values of the 9 binary compounds, 18 ternary alloys and 15 quaternary alloy comprising the family of practical III-V materials can, in principle, provide sources, detectors, and optoelectronic components over a wavelength range between 0.51 and 7.3 μm.
Journal ArticleDOI
Monolithic integration of optical waveguide circuitry with III-V photodetectors for advanced lightwave receivers
TL;DR: In this paper, the tradeoffs between performance and integrability of waveguide-photodetector integration on III-V semiconductors for applications in the 0.8-1.6-mu m wavelength range are discussed.
References
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Journal ArticleDOI
Optical waveguiding in proton-implanted GaAs
TL;DR: In this article, an optical waveguide was produced in n-type GaAs by implantation with 300-keV protons, and the guiding was due to the elimination of charge carriers from the implanted region.
Journal ArticleDOI
Optical Guiding and electro-optic modulation in GaAs epitaxial layers
TL;DR: In this article, a single mode TE or TM propagation is demonstrated in an optical waveguide consisting of a high resistivity semiconductor (GaAs) layer (≈ 10 μ) which is sandwiched between a metal film and a lower resistor semiconductor.
Journal ArticleDOI
Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 μm
TL;DR: In this article, a uniform Schottky barrier avalanche photodiodes with gains greater than 250, rise times less than 200 psec, and good quantum efficiencies at 1.06 μm have been fabricated in InxGa1−xAs alloys.
Journal ArticleDOI
Proton-implanted optical waveguide detectors in GaAs
TL;DR: In this paper, optical waveguide detectors were fabricated by taking advantage of this absorption mechanism in the presence of a Schottky barrier depletion layer, and the detector response times less than 200 ns and external quantum efficiencies of 16% have been observed.
Journal ArticleDOI
Three‐dimensional light guides in single‐crystal GaAs–Alx Ga1 − xAs
TL;DR: In this paper, a technique for fabricating miniature dielectric waveguides of GaAs embedded in a matrix of AlxGa1−xAs is described, where the film growth employs molecular beam epitaxy (MBE), while the pattern generation is based on photolithography combined with recently developed anodization technique.