Journal ArticleDOI
Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 μm
TLDR
In this article, a uniform Schottky barrier avalanche photodiodes with gains greater than 250, rise times less than 200 psec, and good quantum efficiencies at 1.06 μm have been fabricated in InxGa1−xAs alloys.Abstract:
Uniform Schottky barrier avalanche photodiodes with gains greater than 250, rise times less than 200 psec, and good quantum efficiencies at 1.06 μm have been fabricated in InxGa1−xAs alloys. The material used for these devices was grown epitaxially on GaAs substrates using an AsCl3–H2–Ga–In vapor‐phase system which permitted grading the epitaxial layers from GsAs to the desired composition.read more
Citations
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Journal ArticleDOI
Semiconducting and other major properties of gallium arsenide
TL;DR: In this paper, the authors provide numerical and graphical information about many physical and electronic properties of GaAs that are useful to those engaged in experimental research and development on this material, including properties of the material itself, and the host of effects associated with the presence of specific impurities and defects is excluded from coverage.
Journal ArticleDOI
Fabrication and electrical characterization of circuits based on individual tin oxide nanowires
Francisco Hernandez-Ramirez,Albert Tarancón,Olga Casals,J. Rodriguez,Albert Romano-Rodriguez,Joan Ramon Morante,Sven Barth,Sanjay Mathur,Tae Y. Choi,Dimos Poulikakos,Victor Callegari,Philipp M. Nellen +11 more
TL;DR: The nanoscale devices described herein were characterized using impedance spectroscopy, enabling the development of an equivalent circuit and the proposed methodology of nanocontacting and measurements can be easily applied to other nanowires and nanometre-sized materials.
Book ChapterDOI
Chapter 5 Avalanche Photodiodes
G.E. Stillman,C.M. Wolfe +1 more
TL;DR: In this article, the performance limitations of Si PIN detectors and avalanche photodiodes are discussed, so that a decision regarding which device to employ can be based on the system requirements.
Journal ArticleDOI
Electrical properties of individual tin oxide nanowires contacted to platinum electrodes
Francisco Hernandez-Ramirez,Albert Tarancón,Olga Casals,Eva Pellicer,J. Rodriguez,Albert Romano-Rodriguez,Joan Ramon Morante,Sven Barth,Sanjay Mathur +8 more
TL;DR: In this article, a combined model involving thermionic emission and tunneling through interface states is proposed to describe the electrical conduction through the platinum-nanowire contacts, fabricated by focused ion beam techniques.
Journal ArticleDOI
The Ga0.47In0.53As homojunction photodiode—A new avalanche photodetector in the near infrared between 1.0 and 1.6 μm
Thomas P. Pearsall,M. Papuchon +1 more
TL;DR: In this paper, a new pn photodetector operating at room temperature and sensitive in the near infrared for wavelengths as long as 1.6 μm has been made from Ga0.47In0.53As grown lattice matched on InP substrates by LPE.
References
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Journal ArticleDOI
Multiplication noise in uniform avalanche diodes
TL;DR: In this article, the spectral density of the noise generated in a uniformly multiplying p-n junction can be derived for any distribution of injected carriers, and the analysis is limited to the white noise spectrum only, and to diodes having large potential drops across the multiplying region of the depletion layer.
Journal ArticleDOI
Avalanche‐Photodiode Frequency Response
TL;DR: In this paper, it was shown that α and β remain constant over a practical range of multiplied photocurrents, and that α does not reduce the device bandwidth as long as the dc multiplication M 0 is less than α/β.
Journal ArticleDOI
Avalanche Breakdown in Gallium Arsenide p − n Junctions
TL;DR: In this paper, the authors studied charge multiplication and avalanche breakdown in relatively narrow diffused diffused $p\ensuremath{-}n$ junctions in GaAs.
Journal ArticleDOI
GaAs SCHOTTKY BARRIER AVALANCHE PHOTODIODES
TL;DR: In this article, a uniform avalanche Schottky barrier photodiodes have been fabricated by plating a thin layer of platinum on GaAs and forming a guard ring by proton radiation.
Journal ArticleDOI
Conduction bands of GaxIn1−xAs and InAsxSb1−xalloys
TL;DR: In this paper, measurements of Hall coefficient and electrical conductivity have been made on alloys of the systems GaxIn1−xAs and InAsxSb1−X over a range of temperature from 200 up to 950 °K or to 20° below the s...