Journal ArticleDOI
MOS/sup 2/: an efficient MOnte Carlo Simulator for MOS devices
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TLDR
An efficient Monte Carlo device simulator has been developed as a postprocessor of a two-dimensional numerical analyzer based on the drift-diffusion model, leading to a CPU time saving of at least one order of magnitude compared with the traditional approach.Abstract:
An efficient Monte Carlo device simulator has been developed as a postprocessor of a two-dimensional numerical analyzer based on the drift-diffusion model. The Monte Carlo package analyzes real VLSI MOSFETs in a minicomputer environment, overcoming some existing theoretical and practical problems. In particular, the particle free-flight time distribution is obtained by a new algorithm, leading to a CPU time saving of at least one order of magnitude compared with the traditional approach. To describe rare electron configurations, such as the high-energy tails of the distributions and the particle dynamics in the presence of large retarding fields, a multiple repetition scheme was implemented. Selected applications are presented to illustrate the simulator's capabilities. >read more
Citations
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Journal ArticleDOI
Analytic band Monte Carlo model for electron transport in Si including acoustic and optical phonon dispersion
TL;DR: In this article, the authors describe the implementation of a Monte Carlo model for electron transport in silicon, which uses analytic, nonparabolic electron energy bands, which are computationally efficient and sufficiently accurate for future lowvoltage s, 1V d nanoscale device applications.
Journal ArticleDOI
Computer-aided design for VLSI circuit manufacturability
TL;DR: In this article, the manufacturing-oriented component of the CAD of VLSI circuits is discussed, and a number of issues and design problems relevant to achieving a high level of IC manufacturability are examined.
Journal ArticleDOI
Monte Carlo analysis of semiconductor devices: the DAMOCLES program
TL;DR: In this article, the behavior of small semiconductor devices is simulated using an advanced Monte Carlo carrier transport model, which improves upon the state of the art by including the full band structure of the semiconductor, by using scattering rates computed consistently with the band structure, and by accounting for both long and short-range interactions between carriers.
Journal ArticleDOI
Hydrodynamic equations for semiconductors with nonparabolic band structure
TL;DR: In this paper, a generalized hydrodynamic model for semiconductors without the assumption of a parabolic band structure is presented, where the quantity carrier temperature is defined and five relaxation times have to be introduced instead of the two in use so far, in order to take nonparabolicity into account.
Journal ArticleDOI
A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs
TL;DR: An efficient self-consistent device simulator coupling Poisson equation and Monte Carlo transport suitable for general silicon devices, including those with regions of high doping/carrier densities, is discussed.
References
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Book
Computer simulation using particles
R W Hockney,J W Eastwood +1 more
TL;DR: In this paper, a simulation program for particle-mesh force calculation is presented, based on a one-dimensional plasma model and a collisionless particle model, which is used to simulate collisionless particle models.
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Analysis and simulation of semiconductor devices
TL;DR: The history of numerical device modeling can be traced back to the early 1970s as mentioned in this paper, when the basic Semiconductor Equations were defined and the goal of modeling was to identify the most fundamental properties of numerical devices.
Journal ArticleDOI
The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
Carlo Jacoboni,Lino Reggiani +1 more
TL;DR: In this paper, the basic principles of the Monte Carlo method, as applied to the solution of transport problems in semiconductors, are presented in a comprehensive and tutorial form, with the aim of showing the power of the method in obtaining physical insights into the processes under investigation.
Journal ArticleDOI
Monte Carlo determination of electron transport properties in gallium arsenide
TL;DR: In this article, a Monte Carlo technique was used to calculate the electron distribution functions in the (000) and (100) valleys of gallium arsenide, and the structure of the distribution function was interpreted in terms of the energy dependence of the scattering processes, particular reference being made to the prediction of a population inversion for fields in excess of about 10 kV cm.
Journal ArticleDOI
Transport equations for electrons in two-valley semiconductors
TL;DR: In this paper, the authors derived transport equations for particles, momentum, and energy of electrons in a semiconductor with two distinct valleys in the conduction band, such as GaAs.