Journal ArticleDOI
Multiphase structure of hydrogenated amorphous silicon carbide thin films
TLDR
The structural and optical properties of hydrogenated amorphous silicon carbon (a-Si 1− x C x :H) thin films, grown from argon diluted silane, ethylene, and hydrogen mixture by plasmaenhanced chemical vapor deposition (PE-CVD) technique, were studied.Abstract:
The structural and optical properties of hydrogenated amorphous silicon carbon (a-Si 1− x C x :H) thin films, grown from argon diluted silane, ethylene, and hydrogen mixture by plasma-enhanced chemical vapor deposition (PE-CVD) technique, were studied. Variable flow rates and other growth conditions were applied. A variety of techniques, including X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy, Raman scattering (RS), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HR-TEM), UV-VIS-NIR spectroscopy, and photoluminescence (PL) were used to characterize the grown materials. The results confirmed the multiphase structure of the grown a-Si 1− x C x :H thin films: Si–C network, carbon-like and silicon-like clusters coexisting. The room temperature (RT) PL shows a different result from the previous reports. It is suggested that both graphite-like phase and a-Si:H-like phase are light-emitting grains. The two types of grains and Si–C network are the origin of the PL in hydrogenated amorphous silicon carbide material.read more
Citations
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Journal ArticleDOI
A comparative study of low dielectric constant barrier layer, etch stop and hardmask films of hydrogenated amorphous Si-(C, O, N)
TL;DR: In this article, the properties of the studied films indicate that they are potential candidates as barrier layer, etch stop and hardmask films for the advanced interconnect technology, and they are characterized using X-ray photoelectron spectroscopy, Fourier transform infrared spectroscope, and nano-indentation.
Journal ArticleDOI
Characteristics of low-k SiOC(–H) films deposited at various substrate temperature by PECVD using DMDMS/O2 precursor
TL;DR: In this paper, the influence of substrate temperature on SiOC(H) thin films deposited on p-type Si(100) substrates by PECVD with dimethoxydimethylsilane (DMDMS) and oxygen gas as precursors was reported.
Journal ArticleDOI
Effect of Pyrolysis Temperature on the Structure and Conduction of Polymer-Derived SiC
TL;DR: In this article, the authors studied the electric conductivity and structure of polymer-derived carbon-rich amorphous SiC pyrolyzed at different temperatures, and they found that the conductivity of the material increased drastically following an Arrhenius relationship with the activation energy of 3.4
Journal ArticleDOI
Structure, paramagnetic defects and light-emission of carbon-rich a-SiC:H films
A. V. Vasin,S. P. Kolesnik,A. A. Konchits,A.V. Rusavsky,V. S. Lysenko,Alexei Nazarov,Yukari Ishikawa,Yaroslav Koshka +7 more
TL;DR: In this article, the effect of vacuum annealing on local structure reconstruction, evolution of photoluminescence (PL) and paramagnetic defects in carbon-rich a-Si1−xCx:H films (x=0.7) was studied.
Journal ArticleDOI
Recent progress of high efficiency Si thin‐film solar cells in large area
Dong Joo You,Sun Ho Kim,Hyun Lee,Jin-Won Chung,Sun-Tae Hwang,Youn Ho Heo,Sungeun Lee,Heon-Min Lee +7 more
TL;DR: In this paper, a triple junction cell (a-Si:H/A-SiGe: H/μc-Si-H) was developed to achieve the state-of-the-art performance.
References
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MonographDOI
Hydrogenated amorphous silicon
TL;DR: In this article, the electronic density of states of amorphous silicon and their electronic states have been investigated in terms of defect reactions, thermal equilibrium and metastability, as well as their electronic properties.
Journal ArticleDOI
Raman scattering characterization of carbon bonding in diamond and diamondlike thin films
TL;DR: In this article, the atomic bonding configurations of carbon bonding in diamond and diamond-like thin films are explored using Raman scattering, and the general aspects of Raman scatter from composites are presented.
Journal ArticleDOI
Properties and structure of a‐SiC:H for high‐efficiency a‐Si solar cell
TL;DR: A series of experimental investigations on optical and optoelectronic properties of methane and ethylene-based a−SiC:H films has been made as mentioned in this paper, and the chemical bonding structure of two kinds of a− SiC: H films has also been explored from infrared (IR) absorption structural analysis.
Journal ArticleDOI
Recombination and photoluminescence mechanism in hydrogenated amorphous carbon.
TL;DR: The luminescence mechanism in a-C:H is described as a modification of the band tail luminescent in hydrogenated amorphous Si and paramagnetic defects are confirmed as the nonradiative recombination centers.