Negative Photoconductance Effect: An Extension Function of the TiOx-Based Memristor
Guangdong Zhou,Bai Sun,Xiaofang Hu,Linfeng Sun,Zhuo Zou,Bo Xiao,Wuke Qiu,Bo Wu,Jie Li,Juanjuan Han,Liping Liao,Cunyun Xu,Gang Xiao,Lihua Xiao,Jianbo Cheng,Shaohui Zheng,Lidan Wang,Qunliang Song,Shukai Duan +18 more
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This article is published in Advanced Science.The article was published on 2021-05-06 and is currently open access. It has received 76 citations till now. The article focuses on the topics: Memristor.read more
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Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing
TL;DR: In this article , the progress, challenges, and opportunities for both volatile and nonvolatile memristors in the level of materials, integration technology, algorithm, and system are highlighted.
Journal ArticleDOI
ABO3 multiferroic perovskite materials for memristive memory and neuromorphic computing
Bai Sun,Guangdong Zhou,Linfeng Sun,Hongbin Zhao,Yuanzheng Chen,Feng Yang,Yong Zhao,Qunliang Song +7 more
TL;DR: In this article, a review of ABO3-based memristive devices for artificial intelligence applications is presented, including ion doping, electrode selection, and interface modulation, as well as the progress, challenges, and possible solutions are proposed.
Journal ArticleDOI
Refining the Negative Differential Resistance Effect in a TiOx-Based Memristor.
TL;DR: In this paper, the N-type negative difference resistance (NDR) is characterized by the peak/valley voltage (Vp/Vv) and the corresponding current (Ip/Iv), which is observed in the resistive switching memory device of Ag|TiO2|F-doped SnO2 at room temperature.
Journal ArticleDOI
Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications
TL;DR: In this paper, the authors focus on one class of crystalline materials (CMs)-based flexible memristors with state-of-the-art experimental demonstrations, including 2D materials, metal-organic frameworks, covalent organic frameworks, and perovskites.
Journal ArticleDOI
Multilevel memory and artificial synaptic plasticity in P(VDF-TrFE)-based ferroelectric field effect transistors
TL;DR: In this article , a multilevel data memory and artificial synaptic plasticity in poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] ferroelectric field effect transistors were demonstrated.
References
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Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
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Fully hardware-implemented memristor convolutional neural network
Peng Yao,Huaqiang Wu,Bin Gao,Jianshi Tang,Qingtian Zhang,Wenqiang Zhang,Jianhua Yang,He Qian +7 more
TL;DR: The fabrication of high-yield, high-performance and uniform memristor crossbar arrays for the implementation of CNNs and an effective hybrid-training method to adapt to device imperfections and improve the overall system performance are proposed.
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Memory devices and applications for in-memory computing
TL;DR: This Review provides an overview of memory devices and the key computational primitives enabled by these memory devices as well as their applications spanning scientific computing, signal processing, optimization, machine learning, deep learning and stochastic computing.
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Electrochemical metallization memories—fundamentals, applications, prospects
TL;DR: This review focuses on electrochemical metallization memory cells (ECM), highlighting their advantages as the next generation memories and the prospects of ECM with regard to further scalability and the ability for multi-bit data storage.
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Optoelectronic resistive random access memory for neuromorphic vision sensors.
Feichi Zhou,Zheng Zhou,Jiewei Chen,Tsz Hin Choy,Jingli Wang,Ning Zhang,Ziyuan Lin,Shimeng Yu,Jinfeng Kang,H.-S. Philip Wong,Yang Chai +10 more
TL;DR: A simple two-terminal optoelectronic resistive random access memory (ORRAM) synaptic devices for an efficient neuromorphic visual system that exhibit non-volatile optical resistive switching and light-tunable synaptic behaviours.