Journal ArticleDOI
New features of the temperature dependence of photoconductivity in plasma‐deposited hydrogenated amorphous silicon alloys
Reads0
Chats0
TLDR
In this article, the temperature and flux dependences of photoconductivity have been investigated for plasma-deposited hydrogenated amorphous silicon alloys produced under a variety of processing conditions.Abstract:
The temperature and flux dependences of photoconductivity have been investigated for plasma‐deposited hydrogenated amorphous silicon alloys produced under a variety of processing conditions. In undoped films, new features such as thermal quenching and supralinearity are observed. Such behavior is critically dependent on the position of the Fermi level, and is not observed in alloys doped by the addition to the plasma of PH3, B2H6, O2+N2 mixtures, or air. Interpretation of the data is based on a model of competing recombination centers.read more
Citations
More filters
Journal ArticleDOI
Density of the gap states in undoped and doped glow discharge a-Si:H
TL;DR: In this article, the density of gap states in undoped and phosphorus and antimony doped a-Si:H has been determined from the absorption coefficient measurement using a constant photocurrent method to determine the value of optical absorption in the low absorption region.
Patent
Insulated gate field effect transistor and its manufacturing method
TL;DR: In this article, an insulated gate field effect transistor is constructed by first forming a non-single crystalline semiconductor layer or island on an insulating surface of a substrate, and a gate insulating layer is then formed on the semiconductor layers.
Journal ArticleDOI
Electrical and optical properties of boronated tetrahedrally bonded amorphous carbon (ta-C:B)
TL;DR: In this article, a detailed study of the electrical properties of boron-doped trihedrally bonded amorphous carbon (ta-C:B) is presented. But no successful p-type doping has been reported until now.
Journal ArticleDOI
Some observations on the photoconductivity of amorphous semiconductors
TL;DR: In this article, the effect of doping on the steady-state photoconductivity, σ p, of hydrogenated amorphous silicon (a-Si:H) was explored down to temperatures of 4.2 K.
Journal ArticleDOI
On thermal quenching of the photoconductivity in hydrogenated amorphous silicon
Minh Q. Tran,Minh Q. Tran +1 more
TL;DR: In this article, the authors present an explanation for thermal quenching in undoped and weakly doped hydrogenated amorphous silicon (a-Si:H) with computer simulations employing the theory of Simmons and Taylor.
References
More filters
BookDOI
Amorphous and liquid semiconductors
TL;DR: In this article, the nature of the amorphous state and the electronic properties of the Amorphous Semi-conductors have been investigated in the context of liquid semiconductors.
Journal ArticleDOI
Nonequilibrium Steady-State Statistics and Associated Effects for Insulators and Semiconductors Containing an Arbitrary Distribution of Traps
J. G. Simmons,G. W. Taylor +1 more
TL;DR: In this article, the authors derived the statistics for an arbitrary distribution of traps under nonequilibrium steady-state conditions, and it was seen to be identical in form to the Shockley-Read expression for a single trapping level.
Journal ArticleDOI
Luminescence studies of plasma-deposited hydrogenated silicon
TL;DR: In this paper, the photoluminescence of amorphous silicon was investigated and the luminescence intensity and spectral line shape were shown to be sensitive to many deposition variables, in particular the power coupled into the discharge, the concentration of silane in the gas stream, and the deposition substrate temperature.
Journal ArticleDOI
Electronic transport and state distribution in amorphous Si films
TL;DR: In this article, a model for the electronic state distribution and previous field effect measurements was put forward, which also appears to be applicable to the interpretation of transport results in amorphous Si specimens prepared by vacuum evaporation or sputtering.
Related Papers (5)
Reversible conductivity changes in discharge‐produced amorphous Si
D. L. Staebler,C. R. Wronski +1 more
Nonequilibrium Steady-State Statistics and Associated Effects for Insulators and Semiconductors Containing an Arbitrary Distribution of Traps
J. G. Simmons,G. W. Taylor +1 more