Journal ArticleDOI
Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High- $k$ Passivation Layer
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TLDR
In this paper, a 2D analysis of breakdown characteristics in AlGaN/GaN high electron mobility transistors (HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer.Abstract:
2-D analysis of breakdown characteristics in AlGaN/GaN high electron mobility transistors (HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer. The dependence of the OFF-state breakdown voltage on the relative permittivity of the passivation layer er and the thickness of the passivation layer d are studied. It is shown that as er increases, the OFF-state breakdown voltage increases. This is because the electric field at the drain edge of the gate is weakened as er increases. This occurs because in the insulator the applied voltage tends to drop uniformly in general, and hence when the insulator is attached to the semiconductor, the voltage drop along the semiconductor becomes smoother at the drain edge of the gate if the er of the insulator is higher. It is also shown that the OFF-state breakdown voltage increases as d increases because the electric field at the drain edge of the gate is weakened as d increases. It is concluded that AlGaN/GaN HEMTs with a high- k and thick passivation layer should have high breakdown voltages.read more
Citations
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Journal ArticleDOI
Breakdown mechanisms in AlGaN/GaN HEMTs: An overview
TL;DR: In this article, the physical mechanisms responsible for breakdown current in AlGaN/GaN high electron mobility transistors (HEMTs) were reviewed and compared through a critical comparison between experimental data and previously published results.
Journal ArticleDOI
Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- ${k}$ Passivation Layer and High Acceptor Density in Buffer Layer
TL;DR: In this article, a 2D analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k$ passivation layer was made, and the results were compared with those having a normal SiN passivation.
Journal ArticleDOI
OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown
Matteo Meneghini,Giulia Cibin,Marco Bertin,Godefridus Adrianus Maria Hurkx,Ponky Ivo,Jan Sonsky,Jeroen Croon,Gaudenzio Meneghesso,Enrico Zanoni +8 more
TL;DR: In this paper, the degradation process of high-power AlGaN/GaN high electron mobility transistors (HEMTs) is shown to be time-dependent, with a measurable increase in sub-threshold drain-source leakage due to the accumulation of positive charge in proximity of the gate.
Journal ArticleDOI
Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate
TL;DR: In this article, the effect of geometrical variables of FP and insulator layer on electric field distribution and VBD is investigated systematically, and a 2D simulation of off-state breakdown voltage for AlGaN/GaN high electron mobility transistors (HEMTs) with multi field-plates (FPs) is presented.
Journal ArticleDOI
The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs
TL;DR: Results show that the Schottky Source Drain contact (SSD) high-k passivated AlGaN/GaN device is suitable for high power application.
References
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Journal ArticleDOI
GaN-Based RF Power Devices and Amplifiers
TL;DR: The latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, are reviewed to achieve the state-of-the-art microwave and millimeter-wave performance.
Journal ArticleDOI
30-W/mm GaN HEMTs by field plate optimization
Yifeng Wu,Adam William Saxler,Marcia Moore,R.P. Smith,Scott Sheppard,P. Chavarkar,T. Wisleder,Umesh K. Mishra,P. Parikh +8 more
TL;DR: In this article, a GaN high-electron-mobility-transistors (HEMTs) on SiC were fabricated with field plates of various dimensions for optimum performance, and an enhancement in radio frequency (RF) current-voltage swings was achieved with acceptable compromise in gain, through both reduction in the trapping effect and increase in breakdown voltages.
Journal ArticleDOI
Trapping effects in GaN and SiC microwave FETs
TL;DR: This paper reviews the various trapping phenomena observed in SiC- and GaN-based FETs that contribute to compromised power performance and the measurement techniques utilized to identify these traps.
Journal ArticleDOI
Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate
TL;DR: In this paper, the authors investigated the breakdown (V/sub br/) enhancement potential of the field plate (FP) technique in the context of AlGaN/GaN power HEMTs.
Journal ArticleDOI
Punch-through in short-channel AlGaN/GaN HFETs
Michael J. Uren,K. J. Nash,R.S. Balmer,Trevor Martin,Erwan Morvan,N. Caillas,Sylvain Delage,Damien Ducatteau,B. Grimbert,J.C. De Jaeger +9 more
TL;DR: In this paper, it is shown that a net acceptor density of around 10/sup 17/ cm/sup -3/ is required to ensure suppression of short-channel effects.