Journal ArticleDOI
On the extraction of linear and nonlinear physical parameters in nonideal diodes
Vissarion Mikhelashvili,Gadi Eisenstein,V. Garber,S. Fainleib,Gad Bahir,Dan Ritter,Meir Orenstein,A. Peer +7 more
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In this paper, a parameter extraction technique for the simultaneous determination of physical parameters in nonideal Schottky barrier, p-n and p-i-n diodes is described.Abstract:
We describe a parameter extraction technique for the simultaneous determination of physical parameters in nonideal Schottky barrier, p-n and p-i-n diodes. These include the ideality factor, saturation current, barrier height, and linear or nonlinear series, and parallel leakage resistances. The suggested technique which deals with the extraction of bias independent parameters makes use of the forward biased current–voltage (I–V) characteristics and the voltage-dependent differential slope curve α(V)=[d(ln I)]/[d(ln V)]. The method allows (a) establishment of the current flow mechanisms at low and high bias levels, (b) extensive of the permissible ranges of determined parameters beyond what is possible in other published methods, and (c) to automation and computerization of the measurement processes. The method is verified experimentally using metal–semiconductor structures based on Si, InGaP, and HgCdTe as well as an InGaAs/InGaAsP multiple quantum well laser diode exemplifying a p-n junction.read more
Citations
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Journal ArticleDOI
Gain mechanism in GaN Schottky ultraviolet detectors
TL;DR: In this article, a unified description of the gain mechanism in GaN Schottky detectors is presented, which is valid for all device structures under study, and represents a unified model for all devices under study.
Journal ArticleDOI
Effects of annealing conditions on optical and electrical characteristics of titanium dioxide films deposited by electron beam evaporation
TL;DR: In this article, measured evolutions of the optical band gap, refractive index, and relative dielectric constant of TiO2 film obtained by electron beam gun evaporation and annealed in an oxygen environment were reported.
Journal ArticleDOI
Energy level and band alignment for GaAs-alkylthiol monolayer-Hg junctions from electrical transport and photoemission experiments.
Guy Nesher,Ayelet Vilan,Hagai Cohen,David Cahen,Fabrice Amy,Calvin K. Chan,Jaehyung Hwang,Antoine Kahn +7 more
TL;DR: From current-voltage measurements, it appears likely that, for both types of junctions, electrons are the main carrier type, although holes may contribute significantly to the transport in the p-GaAs system.
Journal ArticleDOI
Extraction of Schottky diode parameters with a bias dependent barrier height
TL;DR: In this article, the authors describe a technique to extract device parameters of a Schottky barrier diode whose barrier height is bias dependent and which contains a linear series resistance, including the saturation current, the voltage dependence of the barrier height and of the ideality factor as well as series resistance.
Journal ArticleDOI
Solar Cells Parameters Evaluation from Dark I-V Characteristics
TL;DR: In this article, a comparative analysis of three methods to determine the four solar cells parameters (the saturation current (Is), the series resistance (Rs), the ideality factor (n), and the shunt conductance (Gsh)) of the single diode lumped model from its dark curve is presented.
References
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Journal ArticleDOI
Extraction of Schottky diode parameters from forward current-voltage characteristics
S. K. Cheung,N. W. Cheung +1 more
TL;DR: In this article, the forward current densityvoltage (J•V) characteristics of a Schottky diode were used to determine the ideality factor n, the barrier height φB, and the series resistance R of the diode with one single I•V measurement.
Journal ArticleDOI
A modified forward I‐V plot for Schottky diodes with high series resistance
TL;DR: In this article, it was shown that a reliable value of the barrier height can be obtained even if there is a series resistance which would hamper the evaluation of the standard lnI•vs•V plot.
Journal ArticleDOI
Schottky barrier and pn-junction I/V plots — Small signal evaluation
TL;DR: In this paper, the authors proposed and examined three different plots for the determination of the saturation current, the ideality factor, and the series resistance of Schottky diodes and solar cells from the measurement of a single current (I)/voltage (V) curve.
Book
Properties of Narrow-Gap Cadmium-Based Compounds
TL;DR: In this paper, Mercury cadmium telluride: growth mechanical and thermal properties dielectric and optical properties diffusion defects band structure and carrier properties surfaces and interfaces exploitation in devices.