Journal ArticleDOI
On the two-dimensional thermoelectric power in quantum wells of non-parabolic materials under magnetic quantization
TLDR
In this article, a simplified theoretical formulation of the thermoelectric power (TP) under magnetic quantization in quantum wells (QWs) of nonlinear optical materials on the basis of a newly formulated magneto-dispersion law is presented.About:
This article is published in Superlattices and Microstructures.The article was published on 2010-09-01. It has received 7 citations till now. The article focuses on the topics: Magnetic field.read more
Citations
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Book ChapterDOI
Band Structure of Semiconductors
TL;DR: In this article, the authors focus on the band structure of semiconductors and propose a variety of methods such as tight binding, pseudopotential, and k • p methods.
Book ChapterDOI
The DRs in Low Dimensional HD Systems in the Presence of Magnetic Field
TL;DR: In this article, the DR in nano-wires of HD III-V semiconductors in the presence of cross fields has been investigated in Sect. 1.2.1.
Book ChapterDOI
Influence of Terahertz Frequency on the Elastic Constants in 2D Systems
TL;DR: In this paper, the influence of terahertz frequency on the elastic constants in extremely degenerate (ED) 2D systems taking quantized films (QFs) and accumulation layers (ALs) of nonlinear optical, tetragonal, ternary, quaternary, III-V, II-VI, IV-VI and strained compounds, respectively, was investigated.
Book ChapterDOI
The EP from Quantum Wells (QWs) of Heavily Doped (HD) Non-parabolic Semiconductors
TL;DR: In this paper, a newly formulated electron dispersion relation considering all types of anisotropies of the energy band spectrum within the framework of k.p formalism in the presence of Gaussian band tails was proposed.
References
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Journal ArticleDOI
Electronic properties of two-dimensional systems
TL;DR: In this paper, the electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed.
Journal ArticleDOI
New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.
Journal ArticleDOI
Cubic AgPbmSbTe2+m: Bulk Thermoelectric Materials with High Figure of Merit
Kuei Fang Hsu,Sim Loo,Fu Guo,Wei Chen,Jeffrey S. Dyck,Ctirad Uher,Timothy P. Hogan,Efstathios K. Polychroniadis,Mercouri G. Kanatzidis +8 more
TL;DR: In the temperature range 600 to 900 kelvin, the AgPbmSbTe2+m material is expected to outperform all reported bulk thermoelectrics, thereby earmarking it as a material system for potential use in efficient thermoeLECTric power generation from heat sources.
Journal ArticleDOI
The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
Carlo Jacoboni,Lino Reggiani +1 more
TL;DR: In this paper, the basic principles of the Monte Carlo method, as applied to the solution of transport problems in semiconductors, are presented in a comprehensive and tutorial form, with the aim of showing the power of the method in obtaining physical insights into the processes under investigation.