Proceedings ArticleDOI
On-wafer electro-mechanical characterization of silicon MEMS switches
Leandro Lorenzelli,Kamaljit Rangra,C. Collini,Flavio Giacomozzi,Benno Margesin,F. Pianegiani +5 more
- pp 281-285
TLDR
In this article, the experimental setup and measurement results on RF MEMS switches fabricated for DC to 30 GHz applications are described, based on standard manual microprobe station providing dual pulse actuation voltage waveforms with programmable period and amplitude, ranging from 10/sup -5/ to 1 sec and 0-200 volts respectively.Abstract:
The feasibility of integrating the RF MEMS switches in space and wireless communication systems has generated tremendous interest in related design, fabrication and characterization methodologies. The space applications make long term reliability of the devices a very pertinent issue and involves both the process and device characterization. In this paper we describe the experimental setup and measurement results on RF MEMS switches fabricated for DC to 30 GHz applications. The on-wafer experimental setup, based on standard manual microprobe station provides dual pulse actuation voltage waveforms with programmable period and amplitude, ranging from 10/sup -5/ to 1 sec and 0-200 volts respectively. The usefulness of the dual-pulse testing is demonstrated by the minimal charge generation in the dielectric layer and capacitance measurements with negligible variations over long measurement periods.read more
Citations
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Journal ArticleDOI
Investigation methods and approaches for alleviating charge trapping phenomena in ohmic RF-MEMS switches submitted to cycling test
TL;DR: The effect of three different parameters that have to be considered when cycling ohmic RF-MEMS switches, in particular the shape of the actuation pulse, the cycling frequency and the RF input power are analysed.
DissertationDOI
Reduced-order modelling, circuit-level design and SOI fabrication of microelectromechanical resonators
TL;DR: In this paper, a combined process flow for the simultaneous fabrication of RF microresonators and switches is proposed, where the coupled system element matrices are linearized around an operating point and reduced.
Journal ArticleDOI
Novel design of a RF-MEMS tuneable capacitor based on electrostatically induced torsion
TL;DR: In this paper, the effect of the small in-plane force that develops during the polarization of a parallel plate capacitor with partially overlapping plates was exploited to design a new electromechanical design for a tuneable capacitor with a totally different shape from usual designs.
Dissertation
Study of the electromechanic aspects of RF MEM devices with particular emphasis on the dynamic behavior for the case ofRF MEM switches and tuneable capacitors
TL;DR: In this paper, the authors focused on the dynamic behavior of the RF switches with the aim to find suitable ways to develop switch geometries with faster switching characteristic. And they considered process related aspects, theoretical calculations, numerical simulations and dynamic measurements, and other devices that are useful for the design of the complex RF circuits and that are characterized by a complex dynamic behavior like in plane forces.
References
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Journal ArticleDOI
RF MEMS switches and switch circuits
TL;DR: In this paper, the authors concentrate on electrostatic switches at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques.
Journal ArticleDOI
Micromachined low-loss microwave switches
TL;DR: In this paper, the design and fabrication of a micromechanical capacitive membrane microwave switching device is described, which consists of a thin metallic membrane, which has two states, actuated or unactuated, depending on the applied bias.
Proceedings ArticleDOI
Lifetime characterization of capacitive RF MEMS switches
Charles L. Goldsmith,John C. Ehmke,A. Malczewski,Brandon W. Pillans,S. Eshelman,Zhimin Yao,J. Brank,M. Eberly +7 more
TL;DR: In this paper, the first experimental characterization of dielectric charging within capacitive RF MEMS switches has been demonstrated and their lifetimes were measured using a dual-pulse waveform with 30 to 65 V of actuation voltage.
Proceedings ArticleDOI
Characteristics of micromachined switches at microwave frequencies
C.L. Goldsmith,John N. Randall,S. Eshelman,Tsen-Hwang Lin,David Denniston,S. Chen,B. Norvell +6 more
TL;DR: In this paper, the fundamental characteristics of micromechanical membrane switches operating at microwave frequencies are discussed and the construction and theory of operation of capacitive membrane switches is reviewed. And the inherent advantages of these switches relative to semiconductor switches are discussed.
Journal Article
High-isolation W-band MEMS switches
TL;DR: In this article, the authors present the design, fabrication and measurement of single, T-match and π-match W-band high-isolation MEMS shunt switches on silicon substrates.