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Journal ArticleDOI

Optical properties of intrinsic silicon at 300 K

Martin A. Green, +1 more
- 01 Jan 1995 - 
- Vol. 3, Iss: 3, pp 189-192
TLDR
An updated tabulation of the optical properties of intrinsic silicon relevant to solar cell calculations is presented in this article, where the absorption coeficient, refractive index and extinction co-efficient at 300 K are tabulated over the 0.25-1.45 μm wavelength range at 0.01 μm intervals.
Abstract
An updated tabulation is presented of the optical properties of intrinsic silicon relevant to solar cell calculations. the absorption coeficient, refractive index and extinction coeficient at 300 K are tabulated over the 0.25-1.45 μm wavelength range at 0.01 μm intervals.

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Citations
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Journal ArticleDOI

Graphene, related two-dimensional crystals, and hybrid systems for energy conversion and storage

TL;DR: Graphene and related two-dimensional crystals and hybrid systems showcase several key properties that can address emerging energy needs, in particular for the ever growing market of portable and wearable energy conversion and storage devices.
Journal ArticleDOI

Semiconductor nanowires for energy conversion.

TL;DR: It is discovered that the thermoconductivity of the silicon nanowires can be significantly reduced due to phonon scattering, pointing to a very promising approach to design better thermoelectrical materials.
Journal ArticleDOI

Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients

TL;DR: In this article, an updated tabulation of the optical properties of intrinsic silicon, of particular interest in solar cell calculations, is presented, with improved values of absorption coefficient, refractive index and extinction coefficient over the 0.25-1.45μm wavelength range at 0.01-μm intervals.
Journal ArticleDOI

Reassessment of the Limiting Efficiency for Crystalline Silicon Solar Cells

TL;DR: In this article, the influence of the improved state-of-the-art parameters on the limiting efficiency for crystalline silicon solar cells under 1-sun illumination at 25°C, by following the narrow-base approximation to model ideal solar cells was analyzed.
Journal ArticleDOI

Green light emission in silicon through slow-light enhanced third-harmonic generation in photonic-crystal waveguides

TL;DR: In this paper, the use of slow light for enhancing a nonlinear optical process in a two-dimensional silicon photonic-crystal waveguide is demonstrated, highlighting yet another functionality of silicon photonics chips.
References
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Journal ArticleDOI

Fine structure in the absorption-edge spectrum of si

TL;DR: In this paper, the authors analyzed the absorption spectrum of Si, made with high resolution, near the main absorption edge, at various temperatures between 4.2 and 4.6°C and revealed fine structure in the absorption on the long-wavelength side of this edge.
MonographDOI

High Efficiency Silicon Solar Cells

TL;DR: In this paper, the authors describe the work within the author's Centre directed at further improving performance features while reducing cost towards these lower limits, and also describe progress in the commercialization of the Centre's thin film multilayer cell technology in conjunction with Pacific Power via a newly incorporated company, Pacific Solar Pty. Ltd.
Journal ArticleDOI

Optical functions of silicon determined by two-channel polarization modulation ellipsometry

TL;DR: In this paper, the optical properties of silicon have been determined from 234 to 840 nm (5.30 to 1.48 eV ) at room temperature using two-channel polarization modulation ellipsometry.
Journal ArticleDOI

Infrared Refractive Indexes of Silicon Germanium and Modified Selenium Glass

TL;DR: In this paper, the infrared index of refraction data for single crystal germanium and silicon was presented for a modified selenium glass, and the data for the same type of glass was also presented.
Journal ArticleDOI

Temperature dependence of the optical properties of silicon

TL;DR: The spectral dependence of the absorption coefficient of silicon for photon energies up to 2.7 eV was determined for several temperatures in the range 298-473 K as discussed by the authors, where the effect of a temperature increase appears as a red shift of the spectrum.