Journal ArticleDOI
Optical study of porous silicon buried waveguides fabricated from p-type silicon
TLDR
In this article, the optical buried waveguides fabricated from porous silicon layers are presented, and the modulation of the waveguiding-layer refractive index and the losses on waveguide fabricated from p +.About:
This article is published in Materials Science in Semiconductor Processing.The article was published on 2000-10-01. It has received 33 citations till now. The article focuses on the topics: Silicon photonics & Hybrid silicon laser.read more
Citations
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Journal ArticleDOI
Silicon Porosification: State of the Art
Ghenadii Korotcenkov,Beongki Cho +1 more
TL;DR: In this article, a review is devoted to the analysis of the problems related to fabrication of the Si porous layers, which is motivated by a great interest to Si-based porous materials from nano-to macroscale for various applications in electronics, optoelectronics, photonics, chemical sensors, biosensors, etc.
Journal ArticleDOI
Thermal Oxidation of Porous Silicon: Study on Reaction Kinetics
TL;DR: In this article, the extent of oxidation calculated from mass gains is plotted as a function of oxidation time and temperature by fitting the general reaction kinetic solutions of different-order reactions, one finds that the function valid for first-order kinetics gives the best matches.
Journal ArticleDOI
Current status and outlook for silicon-based optical biosensors
TL;DR: In this article, the importance of silicon photonic devices extends beyond passive structures for light guiding and light emission, and the advantages of these silicon-based optical biosensors for high sensitivity detection include a low analyte volume requirement, reduced size, and compatibility with existing CMOS technology.
Journal ArticleDOI
Porous silicon integrated Mach-Zehnder interferometer waveguide for biological and chemical sensing
Kyowon Kim,Thomas E. Murphy +1 more
TL;DR: The fabrication and characterization of nanoporous waveguides are described and their usefulness in measuring small changes in refractive index when exposed to a test analyte is demonstrated, and the integrated interferometer is shown to provide a more stable response in comparison to a comparable fiber-based implementation.
Journal ArticleDOI
Grating couplers on porous silicon planar waveguides for sensing applications
Xing Wei,Christopher Kang,M. Liscidini,Guoguang Rong,Scott T. Retterer,Maddalena Patrini,J. E. Sipe,Sharon M. Weiss +7 more
TL;DR: In this article, the use of polymer gratings as light couplers into porous silicon planar waveguides for sensing applications is studied, along with a study of its detuning due to waveguide infiltration with a chemical linker.
References
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Journal ArticleDOI
Porous silicon multilayer optical waveguides
A. Loni,Leigh T. Canham,Michael Berger,R. Arens-Fischer,H. Münder,Hans Lüth,H.F. Arrand,Trevor M. Benson +7 more
TL;DR: Optical waveguiding is demonstrated in porous silicon multilayers by switching between high and low current densities during the anodic etch process as mentioned in this paper, and two-dimensional strip-loaded waveguides have been produced, for both the visible and infrared, by etching into each top layer through a pre-deposited photolithographically defined mask.
Journal ArticleDOI
Porosity superlattices: a new class of Si heterostructures
M.G. Berger,Ch. Dieker,Markus Thönissen,L. Vescan,Hans Lüth,H. Münder,W Theiss,M Wernke,P. Grosse +8 more
TL;DR: Porosity superlattices have been investigated by transmission electron microscopy, photoluminescence and reflectance spectroscopy in this article, and the results are in good agreement with the values calculated from the etching rate and time.
Journal ArticleDOI
Progress towards silicon optoelectronics using porous silicon technology
TL;DR: Porosity has already resulted in significant performance gains, or might do so in the future as mentioned in this paper, and the performance of a variety of porous Si-based discrete optoelectronic devices has been reviewed.
Journal ArticleDOI
Stress in oxidized porous silicon layers
K. Barla,R. Herino,G. Bomchil +2 more
TL;DR: In this article, the authors measured the stress in oxidized porous silicon layers using x-ray diffraction to measure the substrate curvature and found that the stress is always compressive and its magnitude depends on oxide quality.
Related Papers (5)
Optical losses in porous silicon waveguides in the near-infrared: Effects of scattering
Patrick Ferrand,R. Romestain +1 more