Journal ArticleDOI
Optimization of the thermopower of the antimonide Mo3Sb7 by a partial Sb/Te substitution
TLDR
The binary antimonide Mo3Sb7 is metallic with poor thermoelectric properties and has been investigated in this article, showing that substitution of Te atoms can replace up to 2.3 Sb atoms without noticeable structural changes, leading to a dramatic enhancement in the thermopower.Abstract:
The binary antimonide Mo3Sb7 is metallic with poor thermoelectric properties. Since band structure calculations indicated a possible change to semiconducting behavior by adding two more valence-electrons, the substitutional series Mo3Sb7 − δTeδ has been investigated. Te atoms can replace up to 2.3 Sb atoms in Mo3Sb7 without noticeable structural changes. This substitution leads to a dramatic enhancement in the thermopower, indicating that in fact semiconducting properties have been achieved with the synthesis of Mo3Sb5Te2.read more
Citations
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Journal ArticleDOI
Zintl phases for thermoelectric devices
TL;DR: This perspective outlines a strategy to discover new high zT materials in Zintl phases, and presents results pointing towards the success of this approach.
Journal ArticleDOI
New bulk Materials for Thermoelectric Power Generation: Clathrates and Complex Antimonides†
TL;DR: In this article, two major classes of high-temperature thermoelectrics are presented: clathrates formed by silicides and germanides, and complex antimonides including but not limited to the filled skutterudites.
Journal ArticleDOI
New Quaternary Barium Copper/Silver Selenostannates: Different Coordination Spheres, Metal−Metal Interactions, and Physical Properties
TL;DR: BaAg2SnSe4, BaCu2snSe4 and Ba3Cu2Sn3Se10 were prepared by directly reacting the elements in stoichiometric ratios at 800 °C, followed by long heating between 600 and 650 °C as mentioned in this paper.
Journal ArticleDOI
Optimized thermoelectric properties of Mo(3)Sb(7-x)Te(x) with significant phonon scattering by electrons
TL;DR: In this paper, the authors used a single parabolic band model to predict that the extremely high carrier concentration of Mo3Sb7 can be reduced to a nearly optimized level (∼2 × 1021 cm−3) for thermoelectric figure of merit (zT) by Te-substitution with x = 1.8.
Journal ArticleDOI
Syntheses, crystal and electronic structures, and physical properties of quaternary semiconductors: Ln2Mn3Sb4S12 (Ln = Pr, Nd, Sm, Gd).
TL;DR: Four new quaternary lanthanide antimony sulfides have been synthesized from a stoichiometric element mixture at 1373 K by conventional solid state reactions and their structure represents a novel wavy MnS(6) octahedron layer decorated on both sides by chains of an SbS(5) square pyramid via strong Sb-S bonding interactions.
References
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TL;DR: In this article, the tetrahedron method was used for Brillouin-zone integrations and a translational grid of k points and tetrahedral elements was proposed to obtain results for insulators identical to those obtained with special-point methods with the same number of points.
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Thermoelectric Cooling and Power Generation
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Crystal orbital Hamilton populations (COHP): energy-resolved visualization of chemical bonding in solids based on density-functional calculations
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Filled Skutterudite Antimonides: A New Class of Thermoelectric Materials
TL;DR: A class of thermoelectric materials has been synthesized with a thermoeLECTric figure of merit ZT near 1 at 800 kelvin, which is comparable to the best ZT values obtained for any previously studied thermOElectric material.