Journal ArticleDOI
Phase change studies in Se85In15−xZnx chalcogenide thin films
TLDR
In this paper, the phase change studies in Se85In15−xZnx thin films at various annealing temperatures were described on the basis of structural relaxation and changes in defect states and density of localized states during amorphous to crystalline phase transformation.Abstract:
This research work describes the phase change studies in Se85In15−xZnx thin films at various annealing temperatures. Glassy samples of Se85In15−xZnx were synthesized by the melt quenching method and thin films of thickness 400 nm were prepared by the vacuum evaporation technique on a glass/Si wafer substrate. The glass transition temperature (Tg) and the on-set crystallization temperature (Tc) of the prepared alloys were evaluated by non-isothermal differential scanning calorimetry studies. Thin films were annealed at three temperatures 330 K, 340 K, and 350 K (which are in between Tg and Tc of the synthesized samples) in a vacuum furnace for 2 h. High resolution X-ray diffraction studies demonstrate that the as-prepared films are amorphous in nature whereas the annealed films are of crystalline/polycrystalline in nature. Field emission scanning electron microscopy studies of thin films (as-deposited and crystallized) confirm the phase transformation in Se85In15−xZnx thin films. Optical band gaps were calculated from the Tauc's extrapolation procedure and were found to be enhanced with the Zn concentration and decrease with the increasing annealing temperature. Various optical parameters were evaluated for as-prepared and annealed Se85In15−xZnx thin films. The changes in optical parameters with annealing temperature were described on the basis of structural relaxation as well as changes in defect states and density of localized states during amorphous to crystalline phase transformation in Se85In15−xZnx thin films.This research work describes the phase change studies in Se85In15−xZnx thin films at various annealing temperatures. Glassy samples of Se85In15−xZnx were synthesized by the melt quenching method and thin films of thickness 400 nm were prepared by the vacuum evaporation technique on a glass/Si wafer substrate. The glass transition temperature (Tg) and the on-set crystallization temperature (Tc) of the prepared alloys were evaluated by non-isothermal differential scanning calorimetry studies. Thin films were annealed at three temperatures 330 K, 340 K, and 350 K (which are in between Tg and Tc of the synthesized samples) in a vacuum furnace for 2 h. High resolution X-ray diffraction studies demonstrate that the as-prepared films are amorphous in nature whereas the annealed films are of crystalline/polycrystalline in nature. Field emission scanning electron microscopy studies of thin films (as-deposited and crystallized) confirm the phase transformation in Se85In15−xZnx thin films. Optical band gaps were cal...read more
Citations
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Journal ArticleDOI
Influence of low energy Ag ion irradiation for formation of Bi 2 Se 3 phase from Bi/GeSe 2 heterostructure thin films
TL;DR: In this paper, the influence of 40-keV Ag-ve ion bombardment with different fluences on the microstructural and optical properties of thermally evaporated Bi/GeSe2 bilayer thin films was reported.
Journal ArticleDOI
Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing.
P. Priyadarshini,Subhashree Das,D. Alagarasan,R. Ganesan,S. Varadharajaperumal,Ramakanta Naik +5 more
TL;DR: In this paper, the impact of thermal annealing on the structural, linear, and non-linear optical characteristics of thermally evaporated BixIn35-xSe65 (x = 0, 5, 10, 15 at) thin films was demonstrated.
Journal ArticleDOI
Influence of 120 MeV Ag swift heavy ion irradiation on the optical and electronic properties of As-Se-Bi chalcogenide thin films
TL;DR: In this article, the influence of 120 MeV Ag swift heavy ion irradiation (SHI) at two different fluence on As40Se58Bi02 and As 40Se45Bi15 thin films was reported.
Journal ArticleDOI
Role of Bismuth incorporation on the structural and optical properties in BixIn35-xSe65 thin films for photonic applications
Priyanka Priyadarshini,Subhashree Das,D. Alagarasan,R. Ganesan,S. Varadharajaperumal,Ramakanta Naik +5 more
Journal ArticleDOI
Thermal annealing induced structural, optical and electrical properties change in As40Se60-xBix chalcogenide thin films
TL;DR: In this paper, the formation of topological Bi2Se3 phase upon annealing higher % of Bi content in amorphous As40Se60-xBix (x = 2, 7, 10 and 15%) chalcogenide thin films prepared by thermal evaporation process.
References
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