Patent
Phase shift mask blank and phase shift mask
TLDR
The phase shift mask blank of halftone type has at least one layer of a thin film including silicon, nitrogen and/or oxygen formed on a transparent substrate, and is used for exposure light with a center wavelength not longer than 248 nm.Abstract:
PROBLEM TO BE SOLVED: To adjust the internal stress of a semitransparent film a suitable range in state where the resistance to acid, the resistance to alkali and the resistance to impinging excimer laser of the semitransparent film formed in a phase shift mask blank or the like are improved. SOLUTION: The phase shift mask blank of halftone type has the semitransparent film with at least one layer of a thin film including silicon, nitrogen and/or oxygen formed on a transparent substrate, and is used for exposure light with a center wavelength not longer than 248 nm. The surface of the semitransparent film is precisely formed so that the surface roughness is not more than 0.3 nm in Ra. COPYRIGHT: (C)2002,JPOread more
Citations
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Photomask blank and photomask
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TL;DR: In this article, a photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etch.
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TL;DR: A phase shift mask blank is a blank having, on a transparent substrate, a phase shift film including, as main components, a metal, silicon (Si) and nitrogen (N), having optical characteristics of a transmittance of equal to or greater than 9% and equal to 30% with respect to a wavelength of the ArF excimer laser beam and a phase difference of greater than 150° and less than 180° as mentioned in this paper.
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Phase shift mask blank and phase shift mask
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TL;DR: In this article, a halftone phase shift mask blank has a light semi-transmitting film consisting of a thin film made of a substance containing metal, silicon and oxygen and/or nitrogen as main structural elements on a transparent substrate.
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Reflective mask blank, reflective mask, and method of manufacturing semiconductor device
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References
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Patent
Phase shift mask and its production and exposure method using the phase shift mask
Ryoichi Kobayashi,Junji Miyazaki,Akihiko Toku,Yaichiro Watakabe,Nobuyuki Yoshioka,信行 吉岡,順二 宮崎,良一 小林,昭彦 悳,弥一郎 渡壁 +9 more
TL;DR: In this article, the phase shift mask has high quality and the process for production thereof by decreasing processes at the time of producing the phase shifter mask and to provide the exposure method using the Phase Shift Mask.