Journal ArticleDOI
Photoelectronic properties of synthetic mercury sulphide crystals
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TLDR
In this article, the photoelectronic properties of mercury sulphide crystals grown in an argon atmosphere by a slow convection technique were investigated. But the authors focused on the techniques of space charge conduction and quenching of photoconductivity which have been used to determine the location of localized levels in the energy gap.About:
This article is published in Journal of Physics and Chemistry of Solids.The article was published on 1968-09-01. It has received 40 citations till now. The article focuses on the topics: Band gap & Photoconductivity.read more
Citations
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Electrical conductivity and dielectric characteristics of in situ prepared PVA/HgS nanocomposite films
TL;DR: In this article, the influence of embedded HgS nanoparticles on the conductivity and dielectric properties of polyvinyl alcohol (PVA) and mercury sulfide (HgS) polymer nanocomposite was investigated.
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ZnS, CdS and HgS Nanoparticles via Alkyl-Phenyl Dithiocarbamate Complexes as Single Source Precursors
TL;DR: The synthesis of II-VI semiconductor nanoparticles obtained by the thermolysis of certain group 12 metal complexes as precursors is reported and Thermogravimetric analysis of the single source precursor showed sharp decomposition leading to their respective metal sulfides.
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Excitation spectra and ground-state properties from density-functional theory for the inverted band-structure systems β -HgS, HgSe, and HgTe
TL;DR: In this article, the authors performed a systematic density-functional study of the mercury chalcogenide compounds HgS, HgSe, and HgTe using an all-electron full-potential linear muffin-tin orbital method.
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Properties of inserted mercury sulphide single layers in a Langmuir-Blodgett matrix
TL;DR: In this paper, the authors describe the properties of single layers of mercury sulphides synthesized in situ in two steps in the polar planes of an Langmuir-Blodgett (LB) matrix.
References
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Space-Charge-Limited Currents in Solids
TL;DR: The presence of traps not only reduces the magnitude of space-charge-limited currents, but also is likely to distort the shape of the currentvoltage curve from an ideal square law to a much higher power dependence on voltage.
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Simplified Theory of Space-Charge-Limited Currents in an Insulator with Traps
Abstract: An ohmic contact between a metal and an insulator facilitates the injection of electrons into the insulator. Subsequent flow of the electrons is space-charge limited. In real insulators the trapping of electrons in localized states in the forbidden gap profoundly influences the current flow. The interesting features of the current density-voltage ($J\ensuremath{-}V$) characteristic are confined within a "triangle" in the $logJ\ensuremath{-}logV$ plane bounded by three limiting curves: Ohm's law, Child's law for solids ($J\ensuremath{\propto}{V}^{2}$) and a traps-filled-limit curve which has a voltage threshold and an enormously steep current rise. Simple inequalities relating the true field at the anode to the ohmic field facilitate qualitative discussion of the $J\ensuremath{-}V$ characteristic. Exact solutions have been obtained for an insulator with a single, discrete trap level in a simplified theory which idealizes the ohmic contact and neglects the diffusive contribution to the current. The discrete trap level produces the same type of nonlinearity discovered by Smith and Rose and attributed by them to traps distributed in energy.