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Journal ArticleDOI

Physics of Thin Films

G. Hass, +1 more
- 01 Mar 1964 - 
- Vol. 111, Iss: 3
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This article is published in Journal of The Electrochemical Society.The article was published on 1964-03-01. It has received 1814 citations till now. The article focuses on the topics: Carbon film & Layer by layer.

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GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications

TL;DR: In this article, a review of the properties of the Al x Ga1−x As/GaAs heterostructure system is presented, which can be classified into sixteen groups: (1) lattice constant and crystal density, (2) melting point, (3) thermal expansion coefficient, (4), lattice dynamic properties, (5) lattices thermal properties,(6) electronic-band structure, (7) external perturbation effects on the bandgap energy, (8) effective mass, (9) deformation potential, (10) static and
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Exchange anisotropy — a review

TL;DR: In this article, the unidirectional anisotropy of a ferromagnetic bilayer coupled to an antiferromagnetic film was studied. But the authors focused on the unideal anismotropy produced by the exchange bias field produced by a metal and an oxide bilayer.
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Electrochromic tungsten oxide films: Review of progress 1993–1998

TL;DR: In this article, the progress that has taken place since 1993 with regard to film deposition, characterization by physical and chemical techniques, optical properties, as well as electrochromic device assembly and performance is reviewed.
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Radiative decay engineering 5: metal-enhanced fluorescence and plasmon emission

TL;DR: The RP model provides a rational approach for designing fluorophore-metal configurations with the desired emissive properties and a basis for nanophotonic fluorophores technology.