Journal ArticleDOI
Preparation and properties of tantalum thin films.
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This article is published in Thin Solid Films.The article was published on 1972-12-01. It has received 86 citations till now. The article focuses on the topics: Thin film & Carbon film.read more
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Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing
TL;DR: A review of the current research efforts in ALD for metal and nitride films as well as their applications in modern semiconductor device fabrication can be found in this paper, where the authors provide a deeper understanding about the underlying deposition process and the physical and electrical properties of the deposited films.
Journal ArticleDOI
The relationship between deposition conditions, the beta to alpha phase transformation, and stress relaxation in tantalum thin films
TL;DR: In this paper, the authors demonstrate that the high temperature polymorphic tantalum phase transition from the tetragonal beta phase to the cubic alpha phase causes a large decrease in the resistance of thin films and a complete stress relaxation in films that were intrinsically compressively stressed.
Journal ArticleDOI
Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
TL;DR: In this article, the diffusion barrier properties were investigated using bilayer structures consisting of 200 nm Cu deposited by sputtering on ALD Ta films with various thicknesses, and three in situ analysis techniques consisting of x-ray diffraction, elastic light scattering, and resistance analysis were used to determine the barrier failure temperature of Ta films.
Journal ArticleDOI
Ion energy, ion flux, and ion species effects on crystallographic and electrical properties of sputter-deposited Ta thin films
TL;DR: In this article, the effects of ion bombardment conditions on the crystallographic and electrical properties of tantalum thin films grown on SiO2 and Si have been systematically investigated in Ta thin film formation process employing low-energy (<100 eV) inert-gas ion bombardment on a growing film surface.
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Phase formation behavior and diffusion barrier property of reactively sputtered tantalum-based thin films used in semiconductor metallization
TL;DR: In this article, the impact of varying the nitrogen flow rate and the underlying titanium on the phase formation process was also investigated using X-ray diffractometry, resistivity measurement and scanning electron microscopy.
References
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Measurement of sheet resistivities with the four-point probe
TL;DR: In this paper, correction factors are evaluated for the measurement of sheet resistirities on two-dimensional rectangular and circular samples with the four-point probe, and the factors are also useful in obtaining body resistivities on thin samples.
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Vacuum Deposition of Thin Films
L. Holland,Joseph Greenspan +1 more
TL;DR: Vacuum deposition of thin films as mentioned in this paper, where the authors describe the process of thin film deposition in a vacuum environment and describe the results of their experiments on thin films of different materials.
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Sputtering Yields of Metals for Ar+ and Ne+ Ions with Energies from 50 to 600 ev
Nils Laegreid,G. K. Wehner +1 more
TL;DR: Sputtering yields for polycrystalline metal and semiconductor targets under normally incident Ar+ and Ne+ ion bombardment were measured in the energy range from 50 to 600 ev.
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Sputtering Yields for Low Energy He+‐, Kr+‐, and Xe+‐Ion Bombardment
D. Rosenberg,G. K. Wehner +1 more
TL;DR: Sputtering yields of various metals have been determined for He+−, Kr+•, and Xe+−ion bombardment in the energy range 100 to 600 ev as mentioned in this paper, showing a periodic dependence on atomic number similar to that of the reciprocals of the heats of sublimation.