C
C. Cabral
Researcher at GlobalFoundries
Publications - 41
Citations - 2029
C. Cabral is an academic researcher from GlobalFoundries. The author has contributed to research in topics: Thin film & Silicide. The author has an hindex of 25, co-authored 41 publications receiving 1969 citations.
Papers
More filters
Journal ArticleDOI
Mechanisms for microstructure evolution in electroplated copper thin films near room temperature
James Mckell Edwin Harper,C. Cabral,Panayotis C. Andricacos,Lynne Gignac,Ismail C. Noyan,Kenneth P. Rodbell,Chao-Kun Hu +6 more
TL;DR: In this paper, a model based on grain boundary energy in the fine-grained as-deposited films providing the underlying energy density which drives abnormal grain growth is presented.
Proceedings ArticleDOI
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
J. Kedzierski,Edward J. Nowak,T. Kanarsky,Y. Zhang,Diane C. Boyd,Roy A. Carruthers,C. Cabral,R. Amos,Christian Lavoie,Ronnen Andrew Roy,J. Newbury,E. Sullivan,J. Benedict,P. Saunders,Keith Kwong Hon Wong,Donald F. Canaperi,Mahadevaiyer Krishnan,K.-L. Lee,Beth Ann Rainey,David M. Fried,Peter E. Cottrell,Hon-Sum P. Wong,Meikei Ieong,Wilfried Haensch +23 more
TL;DR: In this paper, metal-gate FinFET and FDSOI devices were fabricated using total gate silicidation, and they satisfy the following metal gate technology requirements: ideal mobility, low gate leakage, high transconductance, competitive I/sub on/I/sub off, and adjustable V/sub t/.
Journal ArticleDOI
Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation
Randy W. Mann,Glen L. Miles,T. A. Knotts,Donald W. Rakowski,Lawrence A. Clevenger,James Mckell Edwin Harper,François M. d'Heurle,C. Cabral +7 more
TL;DR: In this article, the ion implantation of a small dose of Mo into a silicon substrate before the deposition of a thin film of Ti lowers the temperature required to form the commercially important low resistivity C54-TiSi2 phase by 100-150°C.
Journal ArticleDOI
Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
TL;DR: In this article, the diffusion barrier properties were investigated using bilayer structures consisting of 200 nm Cu deposited by sputtering on ALD Ta films with various thicknesses, and three in situ analysis techniques consisting of x-ray diffraction, elastic light scattering, and resistance analysis were used to determine the barrier failure temperature of Ta films.
Journal ArticleDOI
On the use of alloying elements for Cu interconnect applications
TL;DR: In this paper, a set of 24 potential alloying elements for interconnect applications in integrated circuits is presented, including Pd, Au, Al, Ag, Nb, Cr, B, Ti, In, and Mn.