Journal ArticleDOI
Preparation of Silicon Ribbons
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This article is published in Journal of Applied Physics.The article was published on 1961-11-01. It has received 47 citations till now. The article focuses on the topics: Silicon.read more
Citations
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Vapor‐liquid‐solid mechanism of single crystal growth
R. S. Wagner,W. C. Ellis +1 more
Journal ArticleDOI
Silicon-based Nanomaterials for Lithium-Ion Batteries - A Review
TL;DR: In this article, the most recent advance in the applications of 0D (nanoparticles), 1D(nanowires and nanotubes), and 2D (thin film) silicon nanomaterials in lithium-ion batteries are summarized.
Journal ArticleDOI
Formation of zno nanostructures by a simple way of thermal evaporation
B. D. Yao,Y F Chan,Ning Wang +2 more
TL;DR: In this paper, the growth direction of ZnO nanowires is determined by electron diffraction, which has no orientation relationship with the substrate, and a strong room-temperature photoluminescence in the nanostructures has been demonstrated.
Journal ArticleDOI
Silicon Nanowires: A Review on Aspects of their Growth and their Electrical Properties
TL;DR: In this article, the authors summarized some of the essential aspects of silicon-nanowire growth and of their electrical properties, including the expansion of the base of epitaxially grown Si wires, a stability criterion regarding the surface tension of the catalyst droplet, and the consequences of the Gibbs-Thomson effect for the silicon wire growth velocity.
Journal ArticleDOI
Growth, thermodynamics, and electrical properties of silicon nanowires.
TL;DR: A comparison study of the reaction of gold-like and Au-like catalysts in the presence of low Si Solubility solvent and that of a solvent with high solubility, finds that the latter results in higher purity than the former.
References
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Journal ArticleDOI
Chemische Transportreaktionen. III. Über den Transport von Silicium im Temperaturgefälle unter Mitwirkung der Silicium(II)‐halogenide und über die Druckabhängigkeit der Transportrichtung
Harald Schäfer,Bernhard Morcher +1 more
TL;DR: In this paper, a parrative veruche zum Siliciumtransport with Hilfe der gas-formigen Dihalogenide SiCl2, SiBr2, siJ2 werden beschrieben.
Journal ArticleDOI
Morphology and Growth Mechanism of Silicon Ribbons
R. S. Wagner,R. G. Treuting +1 more
Journal ArticleDOI
Epitaxial growth of silicon
TL;DR: In this article, an empirical approach in setting the operating conditions used in this study, has led to establishing the feasibility of epitaxially growing silicon layers on silicon substrates by the disproportionation of silicon di-iodide.