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Properties of amorphous Bi2S3-crystalline silicon heterojunctions
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This article is published in Solid-state Electronics.The article was published on 1992-07-01. It has received 1 citations till now. The article focuses on the topics: Nanocrystalline silicon & Crystalline silicon.read more
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Analysis of a Bismuth Sulfide/Silicon Junction for Building Thin Film Solar Cells
TL;DR: Theoretical analysis showed that the high optical absorption coefficient of Bi 2 S 3 results in a light-generated current density (J L ) of >20 mA/cM 2 for a c-Si(200 nm)Bi z S 3 (300 nm) stack at a combined film thickness of 500 nm, and with an open circuit voltage (V oc ) of nearly 600 mV.