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Journal ArticleDOI

Quantitative depth profiling in surface analysis: A review

Siegfried Hofmann
- 01 Aug 1980 - 
- Vol. 2, Iss: 4, pp 148-160
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This article is published in Surface and Interface Analysis.The article was published on 1980-08-01. It has received 264 citations till now.

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Citations
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Journal ArticleDOI

Photoemission studies of adsorbed oxygen and oxide layers

TL;DR: A comprehensive review about the versatility of photoelectron spectroscopy to study the especially complex interaction of oxygen with metal surfaces and the nature of the reaction products can be found in this paper.
Journal ArticleDOI

Quantitative analysis of the inelastic background in surface electron spectroscopy

TL;DR: In this paper, a physical model for the problem is formulated and based on this, basic deconvolution formulae are found and in particular a formula is derived which allows the extraction of direct quantitative cross-section information through a simple analysis of REELS spectra.
Journal ArticleDOI

The quantitative analysis of surfaces by XPS: A review

TL;DR: In this article, a general framework is presented for the quantitative analysis of surfaces by X-ray photoelectron spectroscopy (XPS) or ESCA, which starts by considering analysis using reference data recorded on the same instrument and under identical conditions as the analysed sample.
Journal ArticleDOI

Thermodynamic and fractal geometric aspects of ion-solid interactions

TL;DR: In this article, a fractal geometry approach to spike formation is presented, based on an idealized collision cascade constructed from the inverse power potential V(r) √ r−1/m (0).
Journal ArticleDOI

Improved depth resolution by sample rotation during Auger electron spectroscopy depth profiling

A Zalar
- 22 Feb 1985 - 
TL;DR: In this article, a sample holder was equipped with a special mechanism which enables sample rotation during depth analysis, which significantly improves the depth resolution of AES composition-depth profiles, but the results of these first investigations clearly show that sample rotation was not sufficient to obtain real depth profiles.
References
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Journal ArticleDOI

Depth resolution of sputter profiling investigated by combined Auger-x-ray analysis of thin films

TL;DR: In this article, the authors discussed the sputtering through the interface between GeSi films with respect to the following points: determination of the original interface position on the depth scale; asymmetry of the shape of the Auger profiles, and broadening of the interface region due to atomic mixing for different ion masses and energies (He+ to Xe+, 0.5 and 5 keV).
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Sputtering of Si with keV Ar^+ Ions : II.Computer Simulation of Sputter Broadening Due to Ion Bombardment in Depth Profiling

TL;DR: In this article, the effect of ion sputtering on the shape of the original depth distribution of impurity atoms has been investigated using the Monte Carlo method, and it has been shown that sputter broadening can be affected by the sputtering yield, namely, less broadening occurs for a higher sputter yield under given conditions.
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A comparison of a theoretical model and sensitivity factor calculations for quantification of sims data

TL;DR: In this article, a comparison of the accuracies of two calculating techniques used to quantify SIMS data from 13 NBS glass and 5 NBS iron standards has been made, and the results show that if a suitable set of sensitivity factors exists, more accurate results are obtained through their use.
Journal ArticleDOI

The development of surface topography during depth profiling in auger electron spectroscopy

TL;DR: In this article, the effects on surface topography of a non-uniform ion beam current and the dependence of sputtering yield on ion incidence angle and surface composition were discussed.
Journal ArticleDOI

Characterization of coatings

TL;DR: In this paper, the authors compare the capabilities and limitations of different surface analytical techniques for coating analysis, the fundamental emission processes as they appear in the various analytical techniques, as well as the details of the sputtering process, have to be taken into account.
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