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Journal ArticleDOI

Quantum interference devices made from superconducting oxide thin films

TLDR
In this article, the superconducting quantum interference devices (dc SQUIDs) were fabricated from thin films of the Superconducting Oxide YBa2Cu3Oy.
Abstract
We have fabricated superconducting quantum interference devices (dc SQUID’s) from thin films of the superconducting oxide YBa2Cu3Oy. The devices were made by first lithographically patterning an ion implant mask containing a 40 by 40 μm loop and two 17‐μm‐wide weak links over a ∼1‐μm‐thick oxide film. Ion implantation was then used to destroy the superconductivity in the film surrounding the device without actually removing material, resulting in a completely planar structure for the SQUID’s. The SQUID’s were operated in the temperature range from 4.2 to 68 K. The superconducting flux quantum was measured to be h/2e in these materials.

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Citations
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Journal ArticleDOI

Grain boundaries in high- T c superconductors

TL;DR: In this article, the authors provide a review of grain boundary properties and their applications in high-Tc superconductivity and high-power and electronic device applications, as well as the theoretical models developed to describe grain boundary behavior.
Journal ArticleDOI

Ion implantation and annealing of crystalline oxides

TL;DR: In this paper, the response of a wide range of crystalline oxides to ion implantation and subsequent thermal processing is reviewed, including Al 2 O 3, LiNbO 3, CaTiO 3, SrTiO3, ZnO, and MgO, as well as the nonoxide materials Si 3 N 4 and SiC.
Journal ArticleDOI

Low noise YBa2Cu3O7−δ grain boundary junction dc SQUIDs

TL;DR: In this paper, a square washer washer geometry was used to construct YBa2Cu3O7−δ grain boundary junction dc superconducting quantum interference devices (SQUIDs).
Journal ArticleDOI

SQUID magnetometers for low-frequency applications

TL;DR: In this paper, the authors present a novel formulation for SQUID operation, which enables them to evaluate and compare the sensitivity and applicability of different devices, taking into account the coupling circuits and electronics.
Journal ArticleDOI

High-temperature superconducting microwave devices: Fundamental issues in materials, physics, and engineering

TL;DR: In this article, the authors review aspects of material science, physics, and engineering which directly impact high-T c ≥ 1 cm superconducting microwave devices and discuss issues which determine the performance of these devices.
References
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Journal ArticleDOI

Possible high Tc superconductivity in the Ba-La-Cu-O system

TL;DR: In this paper, Ba−La−Cu−O system, with the composition BaxLa5−xCu5O5(3−y) have been prepared in polycrystalline form, and samples with x=1 and 0.75,y>0, annealed below 900°C under reducing conditions, consist of three phases, one of them a perovskite-like mixed-valent copper compound.
Journal ArticleDOI

Superconductivity at 93 K in a new mixed-phase Y-Ba-Cu-O compound system at ambient pressure

TL;DR: A stable and reproducible superconductivity transition between 80 and 93 K has been unambiguously observed both resistively and magnetically in a new Y-Ba-Cu-O compound system at ambient pressure.
Journal ArticleDOI

Bulk superconductivity at 91 K in single-phase oxygen-deficient perovskite Ba 2 YCu 3 O 9 − δ

TL;DR: Observation de la transition supraconductrice a 91 K, sur 1,5 K and determination of the densite de courant critique, de l'effet Meissner, du champ critique, du parametre de Sommerfeld, de parametres GL.
Journal ArticleDOI

Thin superconducting oxide films

TL;DR: Critical current densities in excess of 300 A/cm/sup 2/ have been measured close to T/sub c/ in the Y-based materials, which show a strong Meissner effect which agrees with the temperature dependence of the resistance.
Journal ArticleDOI

Effects of radiation damage in ion‐implanted thin films of metal‐oxide superconductors

TL;DR: In this paper, the effects of ion implantation into thin films of the superconductor YBa2Cu3Ox have been studied using oxygen and arsenic ions, the superconducting transition temperature Tc, the change in room-temperature electrical properties from conducting to insulating, and the crystalline to amorphous structural transition in the films were studied as a function of ion dose.
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