Journal ArticleDOI
Rate constant measurements for reactions of SiH3 with O2, NO and NO2 using time-resolved infrared diode laser spectroscopy
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TLDR
In this paper, the rate constants for the reactions SiH3+O2, SiH 3+NO2 and Si H3+NO+N2 have been measured over the pressure range 1-10 Torr at 300 K, by monitoring a siH3 absorption line at 719.931 cm−1 using time-resolved diode laser spectroscopy.About:
This article is published in Chemical Physics Letters.The article was published on 1989-05-12. It has received 35 citations till now. The article focuses on the topics: Reaction rate constant.read more
Citations
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Journal ArticleDOI
Silicon chemical vapor deposition one step at a time: fundamental studies of silicon hydride chemistry
J. M. Jasinski,Stephen M. Gates +1 more
Journal ArticleDOI
Direct kinetic studies of SiH3+SiH3, H, CCl4, SiD4, Si2H6, and C3H6 by tunable infrared diode laser spectroscopy
S. K. Loh,J. M. Jasinski +1 more
TL;DR: In this paper, the authors investigated gas phase reactions of silyl radical, SiH3, using tunable diode laser flash kinetic spectroscopy and derived upper limits to the rate constants for these reactions to be slow at room temperature.
Journal ArticleDOI
Kinetic aspects of oxidation and combustion of silane and related compounds
TL;DR: In this paper, the present day knowledge of SiH4 and related species is summarized from three different view points; (1) phenomenology of oxidation and combustion, in particular ignition, kinetic modeling of combustion, and (3) the present status of relevant elementary reactions.
Journal ArticleDOI
Spontaneous ignition limits of silane and phosphine
TL;DR: In this article, it was shown that spontaneous ignition of both silane and phosphine occurs as a result of a competition of chain branching and chain breaking reactions, in a way that is qualitatively similar to that in hydrogen oxidation.
Journal ArticleDOI
Kinetics and products of the gas-phase reactions of (CH3)4Si, (CH3)3SiCH2OH, (CH3)3SiOSi(CH3)3 and (CD3)3SiOSi(CD3)3 with Cl atoms and OH radicals
Roger Atkinson,Ernesto C. Tuazon,Eric S. C. Kwok,Janet Arey,Sara M. Aschmann,Isabelle Bridier +5 more
TL;DR: In this article, the products of the OH radical-and Cl atom-initiated reactions of hexamethyldisiloxane, [2H18]hexamethylsilane and trimethylsilylmethanol at room temperature and atmospheric pressure were analyzed using FTIR spectroscopy.
References
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Journal ArticleDOI
Evaluated Kinetic and Photochemical Data for Atmospheric Chemistry: Supplement II. CODATA Task Group on Gas Phase Chemical Kinetics
TL;DR: In this paper, the authors extended previous critical evaluations of the kinetics and photochemistry of gas phase chemical reactions of neutral species involved in atmosphere chemistry, and provided the basic physical chemical data needed as input for calculations which model atmospheric chemistry.
Journal ArticleDOI
Simple bond rupture reactions in multiphoton dissociation of molecules
TL;DR: In this paper, a molecular beam study was carried out of the infrared multiphoton dissociation of seven molecules dissociating by a simple bond rupture, and the results can be described very well by a statistical (RRKM) theory of unimolecular reactions.
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Detection of the silyl radical SiH3 by infrared diode-laser spectroscopy.
Chikashi Yamada,Eizi Hirota +1 more
TL;DR: The silyl radical Si${\mathrm{H}}_{3}$ has been detected in a silane-discharge plasma through the observation of the ${\ensuremath{
u}}_{2}$ band by infrared diode-laser spectroscopy.
Journal ArticleDOI
Stoichiometry and possible mechanism of SiH4O2 explosions
TL;DR: The products of O2-O2 mixture explosions vary with mixture composition as mentioned in this paper, as the mixtures become richer in silane, H2 replaces H2O as a final product.
Journal ArticleDOI
Multiphoton dissociation products from halogenated hydrocarbons
TL;DR: In this article, a multiphoton dissociation of various halogenated hydrocarbons by laser beams is reported and the statistical theory of unimolecular reactive is found to be adequate to explain the process.
Related Papers (5)
Stoichiometry and possible mechanism of SiH4O2 explosions
Silicon chemical vapor deposition one step at a time: fundamental studies of silicon hydride chemistry
J. M. Jasinski,Stephen M. Gates +1 more