Journal ArticleDOI
RF MEMS switches with enhanced power-handling capabilities
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TLDR
In this paper, the experimental and theoretical characterization of RF microelectromechanical systems (MEMS) switches for high-power applications is presented, and the problem of switch stiction to the down state as a function of the applied RF power is theoretically and experimentally studied.Abstract:
This paper reports on the experimental and theoretical characterization of RF microelectromechanical systems (MEMS) switches for high-power applications. First, we investigate the problem of self-actuation due to high RF power and we demonstrate switches that do not self-actuate or catastrophically fail with a measured RF power of up to 5.5 W. Second, the problem of switch stiction to the down state as a function of the applied RF power is also theoretically and experimentally studied. Finally, a novel switch design with a top electrode is introduced and its advantages related to RF power-handling capabilities are presented. By applying this technology, we demonstrate hot-switching measurements with a maximum power of 0.8 W. Our results, backed by theory and measurements, illustrate that careful design can significantly improve the power-handling capabilities of RF MEMS switches.read more
Citations
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Design of reconfigurable slot antennas
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Electromechanical considerations in developing low-voltage RF MEMS switches
TL;DR: In this article, the design, fabrication, and testing of a low-actuation voltage Microelectromechanical systems (MEMS) switch for high-frequency applications is described.
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RF MEMS Satellite Switch Matrices
TL;DR: In this article, the potential applications of RF MEMS switch matrices in the satellite industry, where mass reduction and performance improvement is crucial, are described, and the benefits of MEMS technology be come more pronounced for switch matrix because there is a large number of switching elements and therefore any size and mass reduction would have large overall impact.
Journal ArticleDOI
High-power MEMS varactors and impedance tuners for millimeter-wave applications
TL;DR: In this paper, a high-power contactless RF microelectromechanical system (MEMS) varactor and an impedance tuner that utilizes this varactor is simultaneously optimized for maximum impedance coverage and power handling.
Book
RF MEMS Switches and Integrated Switching Circuits
TL;DR: In this paper, the authors present a review of RF MEMS switches and switching circuits in the past five years, focusing on the development of lateral DC-contact switches and capacitive shunt switches.
References
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Journal ArticleDOI
Performance of low-loss RF MEMS capacitive switches
TL;DR: In this paper, the construction and performance of metal membrane radio frequency MEMS switches at microwave and millimeter-wave frequencies was described. But the authors focused on the performance of the switches in terms of on-off capacitance ratio.
Journal ArticleDOI
High-isolation CPW MEMS shunt switches. 1. Modeling
TL;DR: In this article, an electromagnetic model for membrane microelectromechanical systems (MEMS) shunt switches for microwave/millimeter-wave applications is presented, where the up-state capacitance can be accurately modeled using three-dimensional static solvers and full-wave solvers are used to predict the current distribution and inductance of the switch.
Proceedings ArticleDOI
Lifetime characterization of capacitive RF MEMS switches
Charles L. Goldsmith,John C. Ehmke,A. Malczewski,Brandon W. Pillans,S. Eshelman,Zhimin Yao,J. Brank,M. Eberly +7 more
TL;DR: In this paper, the first experimental characterization of dielectric charging within capacitive RF MEMS switches has been demonstrated and their lifetimes were measured using a dual-pulse waveform with 30 to 65 V of actuation voltage.
Journal ArticleDOI
High-isolation CPW MEMS shunt switches. 2. Design
TL;DR: In this article, the LC series resonance of the shunt switch was used to tune two and four-bridge "cross" switches from 10 to 40 GHz with an insertion loss of less than 0.3-0.6 dB, a return loss below -20 dB from 22 to 38 GHz in the up state, and a downstate isolation of 45-50 dB with only 1.5 pF of downstate capacitance.
Proceedings ArticleDOI
Design of low actuation voltage RF MEMS switch
TL;DR: In this article, a low-loss microwave microelectromechanical systems (MEMS) shunt switches are reported that utilize highly compliant serpentine spring folded suspensions together with large area capacitive actuators to achieve low actuation voltages while maintaining sufficient off-state isolation.