Journal ArticleDOI
Roles of interface and oxide trap density in the kinked current behavior of Al/SiO 2 /Si(p) structures with ultra-thin oxides
Han-Wei Lu,Jenn-Gwo Hwu +1 more
TLDR
In this article, a model regarding the oxide voltage dropping efficiency with the consideration of interface trap density and effective charge number density was proposed for the observation of clear current kinked points.Abstract:
A clear current kinked phenomenon was observed in Al/SiO2/Si(p) structures with nanoscale (<2.5 nm) SiO2 in a forward biased region. It was found that the kinked points are dependent on oxide thickness and are not the same as flat-band voltages. A model regarding the oxide voltage dropping efficiency with the consideration of interface trap density (\(D_{\mathrm{it}}\)) and effective charge number density (\(Q_{\mathrm{eff}}/q\)) was proposed for the observation. It is noted that the kinked point is severely affected by the oxide quality and uniformity. However, Al/SiO2/Si(n) structures in a forward biased region do not exhibit this current kinked phenomenon because the dropping behavior of oxide is absolutely different from Al/SiO2/Si(p) structures.read more
Citations
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Journal ArticleDOI
XPS study from a clean surface of Al2O3 single crystals
TL;DR: In this article, the authors used as-sliced Al2O3 single crystals and investigated the chemical state on various surfaces of the single crystal with a high-resolution X-ray photoelectron spectroscopy (XPS).
Journal ArticleDOI
Structural and dielectric characteristic of povidone–silica nanocomposite films on the Si (n) substrate
Adeleh Hashemi,Ali Bahari +1 more
TL;DR: In this article, the effects of annealing temperatures at 150, 200 and 240°C were investigated on the povidone-silica nanocomposite film as a gate dielectric.
Journal ArticleDOI
Studying saturation mobility, threshold voltage, and stability of PMMA-SiO2-TMSPM nano-hybrid as OFET gate dielectric
TL;DR: In this paper, the authors used spin-coated nano-hybrid solutions of PMMA-SiO2-TMSPM (polymethyl methacrylate- silicon oxide-3-trimethoxysilyl)propyl methACrylate) to synthesize a gate dielectric material for OFETs.
Journal ArticleDOI
Electrical Properties of PVP–SiO2–TMSPM Hybrid Thin Films as OFET Gate Dielectric
Ali Bahari,M. Shahbazi +1 more
TL;DR: In this article, the structural properties of the organic hybrid thin-film gate dielectrics were investigated using Fourier transform infrared spectroscopy and x-ray diffraction analysis.
Journal ArticleDOI
Synthesis and Characterization of Cross-Linked Nanocomposite as a Gate Dielectric for p-Type Silicon Field-Effect Transistor
TL;DR: In this article, the effect of annealing temperatures (150°C, 200°C and 240°C) on the solution-processed povidone-silicon oxide dielectric films has been studied.
References
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Book
Mos (Metal Oxide Semiconductor) Physics and Technology
TL;DR: In this article, the authors present a method for extracting interface trap properties from the conductance of a metal oxide Silicon Capacitor at intermediate and high frequency intervals, and demonstrate that these properties can be used for charge trapping in the oxide.
MOS /metal oxide semiconductor/ physics and technology
TL;DR: In this article, the authors present a method for extracting interface trap properties from the conductance of a metal oxide Silicon Capacitor at intermediate and high frequency intervals, and demonstrate that these properties can be used for charge trapping in the oxide.
Journal ArticleDOI
Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements
R. Castagné,A. Vapaille +1 more
TL;DR: In this paper, the authors measured the apparent interface density in the whole band gap of silicon and showed that the apparent inteiface density can contain a contribution of defects unspecific of the interface, for instance, spatial fluctuation of the interfaces or silicon defects introducing a deep level in the band gap.
Journal ArticleDOI
MOS capacitance measurements for high-leakage thin dielectrics
K.J. Yang,Chenming Hu +1 more
TL;DR: In this article, a new technique is presented which allows the frequency-independent device capacitance to be accurately extracted from impedance measurements at two frequencies for a 1.7 nm SiO/sub 2/ capacitor.
Journal ArticleDOI
Current Transport and Maximum Dielectric Strength of Silicon Nitride Films
TL;DR: In this paper, it was shown that at any given temperature and electric field, the current transport is essentially independent of the substrate material, the film thickness, or the polarity of the electrodes.