Patent
Semiconductor device with a high breakdown voltage
Baba Yoshiro Pat Division,Kazuo Pat. Division Tsuru,Akiyama Tatsuo Pat Division,Koshino Yutaka Pat Division +3 more
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TLDR
In this paper, a power transistor with a PN junction exposed on a major surface of the semiconductor substrate, and a semi-insulative polysilicon film formed on the major surface, was disclosed.Abstract:
There is disclosed a power transistor comprising a semiconductor substrate having a PN junction exposed on a major surface of the semiconductor substrate, and a semiinsulative polysilicon film formed on the major surface, the polysilicon film covering the PN junction, the polysilicon film containing at least one of carbon, oxygen, and nitrogen, and the polysilicon film having a thickness of about 3000 Å.read more
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Patent
High-breakdown-voltage semiconductor device
TL;DR: In this article, a high breakdown voltage semiconductor device comprising a semiconductor substrate an insulating layer formed on the semiconductor substratum, a high resistance semiconductor layer consisting of an isolation region formed in the high-RSA layer, an element region formed by the isolation region in a lateral direction, a first low resistance region of a first conductivity type formed in a central surface portion of the element region, and a second low-resistance regions of a second conductivity Type forming in a peripheral surface portion in a part of the region.
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VDMOS transistor and preparation method thereof
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References
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Journal ArticleDOI
Highly reliable high-voltage transistors by use of the SIPOS process
Takeshi Matsushita,Teruaki Aoki,T. Ohtsu,Hisayoshi Yamoto,Hisao Hayashi,M. Okayama,Yoshiyuki Kawana +6 more
TL;DR: The n-p-n and p-n-p high-voltage transistors were developed by using semi-insulating polycrystalline-silicon (SIPOS) films for the surface passivation as discussed by the authors.
Patent
Method of manufacturing a semi-insulating silicon layer
TL;DR: In this article, silicon ions are implanted in a silicon dioxide layer on a silicon substrate so that the dioxide layer is converted into a semi-insulating layer having an improved passivation property.
Journal ArticleDOI
Semi-Insulating Polycrystalline-Silicon (SIPOS) Films Applied to MOS Integrated Circuits
TL;DR: In this paper, a double-layer polycrystalline-silicon (SIPOS) film is employed as a replacement of a thick silicon dioxide layer in C/MOS-IC's of channel-stopperless structure and exhibits excellent field-passivating properties.
Patent
Semiconductor device with a high breakdown voltage characteristic
TL;DR: In this article, a semiconductor device is provided having at least two semiconductor regions of opposite conductivity type and forming a planar-type PN junction, where a field limiting ring is disposed spaced from the PN.
Journal ArticleDOI
High-voltage planar structure using SiO 2 -SIPOS-SiO 2 film
TL;DR: In this paper, the BV CB0 leakage current h FE were studied for high-voltage planar transistors which had three kinds of passivation films; SiO 2 -semi-insulating polycrystalline silicon (SIPOS)-SiO 2 ; SIPOS-SiO2 ; and SiO2 -phosphosilicate glass (PSG)-Si O 2.