Journal ArticleDOI
Simple MOSFET modeling for digital applications
A.W. Lo,J.J. Gibson +1 more
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TLDR
The charge-control concept provides a common base for the modeling of both the MOSFET and the bipolar transistor in digital applications.Abstract:
The charge-control concept provides a common base for the modeling of both the MOSFET and the bipolar transistor in digital applications. The dominating characteristics of common MOSFET digital circuits are contained in simple device models.read more
Citations
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A bibliography on semiconductor device modeling
TL;DR: A literature search on semiconductor device modeling was performed and a bibliography of 486 references was compiled and selected articles from the literature prior to 1970 are included in this bibliography.
Journal ArticleDOI
A first-order d.c. model of the mosfet
TL;DR: An existing first-order d.c. model of the MOSFET that incorporates a non-standard network element, and requires a special symbol to represent it, is reconstructed to use only standard network elements.
References
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Journal ArticleDOI
Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures
TL;DR: The results of a comprehensive study of the overall electrical characteristics of thermally oxidised silicon surfaces are presented, and interpreted on the basis of a simple physical model of the MOS structure as mentioned in this paper.
Journal ArticleDOI
Investigation of thermally oxidized silicon surfaces using metal-oxide-semiconductor structures
Journal ArticleDOI
Static large-signal field-effect transistor models
TL;DR: In this article, a series of static large-signal field-effect transistor (FET) models are presented which consist of familiar circuit building blocks plus a new nonlinear element, the ideal field effect diode.