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Journal ArticleDOI

Simple theoretical analysis of the thermoelectric power under strong magnetic quantization in superlattices of non-parabolic semiconductors with graded interfaces

TLDR
In this paper, a simple theoretical analysis of the thermoelectric power under strong magnetic quantization (TPM) in III-V, II-VI, PbTe/PbSnTe, strained layer and HgTe/CdTe superlattices (SLs) with graded interfaces was presented.
Abstract
An attempt is made in this paper to present a simple theoretical analysis of the thermoelectric power under strong magnetic quantization (TPM) in III–V, II–VI, PbTe/PbSnTe, strained layer and HgTe/CdTe superlattices (SLs) with graded interfaces and compare the same with that of the constituent materials by formulating the respective magneto dispersion laws, which in turn control all the transport properties through Bolzmann transport equation. It has been observed, taking GaAs/Ga 1− x Al x As, CdS/CdTe, PbTe/PbSnTe, InAs/GaSb and HgTe/CdTe with graded interfaces as examples, that the TPM exhibits oscillatory dependence with the inverse quantizing magnetic field due to the SdH and allied SL effects and increases with increasing inverse electron concentration in an oscillatory manner in all the cases. The nature of oscillation is totally band structure dependent and the width of the finite interface enhances the numerical values of the TPM for all the aforementioned SLs. The numerical values of the TPM in graded SLs are greater than that of the constituent materials. The theoretical results are in quantitative agreement with the experimental results as given elsewhere. The well-known expressions for the bulk specimens of wide-gap materials can also be obtained as special cases of our generalized analysis under certain limiting conditions. In addition, we have suggested the experimental methods of determining the Einstein relation for diffusivity–mobility ratio, the Debye screening length and carrier contribution to the elastic constants, respectively, for materials having arbitrary dispersion laws.

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Citations
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Journal ArticleDOI

Simple theoretical analysis of the density-of-states function of Kane type semiconductors in the presence of an external electric field

TL;DR: In this article, the authors studied the energy spectrum of conduction electrons and the corresponding density-of- states function of III-V, ternary and quaternary semiconductors, whose unperturbed energy band structures are defined by the three band model of Kane, in the presence of an external electric field.
Journal ArticleDOI

Simple theory of the density-of-states function in heavily doped non-linear optical and optoelectronic materials

TL;DR: In this article, the dispersion relation of conduction electrons and the corresponding density-of-state (DOS) function in heavily doped non-linear optical, tetragonal, III-V, ternary and quaternary materials forming band tails were studied.
Journal ArticleDOI

Thermoelectric power in ultrathin films, quantum wires and carbon nanotubes under classically large magnetic field: Simplified theory and relative comparison

TL;DR: In this article, the thermoelectric power under classically large magnetic field (TPM) in ultrathin films (UFs), quantum wires (QWs) of nonlinear optical materials on the basis of a newly formulated electron dispersion law considering the anisotropies of the effective electron masses, the spin-orbit splitting constants and the presence of the crystal field splitting within the framework of kp formalism.
Journal ArticleDOI

On the two-dimensional thermoelectric power in quantum wells of non-parabolic materials under magnetic quantization

TL;DR: In this article, a simplified theoretical formulation of the thermoelectric power (TP) under magnetic quantization in quantum wells (QWs) of nonlinear optical materials on the basis of a newly formulated magneto-dispersion law is presented.
Book ChapterDOI

Applications and Brief Review of Experimental Results

TL;DR: In this article, the authors have discussed many aspects of TPSM based on the dispersion relations of the nanostructures of different technologically important materials having different band structures in the presence of 1D, 2D, and 3D confinements of the wavevector space of the charge carriers, respectively.
References
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Journal ArticleDOI

Band structure of indium antimonide

TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.
Journal ArticleDOI

Superlattice and negative differential conductivity in semiconductors

TL;DR: The study of superlattices and observations of quantum mechanical effects on a new physical scale may provide a valuable area of investigation in the fieId of semiconductors.
Book

Electron transport in compound semiconductors

B. R. Nag
TL;DR: In this paper, the Boltzmann Transport Equation is used to calculate the collision probability of the Sphalerite and the Chalcopyrite structures, and the Brillouin Zone is used for the Wurtzite structure.
Journal ArticleDOI

Variational calculations on a quantum well in an electric field

TL;DR: In this paper, the eigenstate of an isolated quantum well subject to an external electric field was analyzed and a quadratic Stark shift was found whose magnitude depended strongly on the finite well depth.
Journal ArticleDOI

Toward quantum well wires: Fabrication and optical properties

TL;DR: In this article, a defect-free GaAs quantum well wires (QWW) with submicron dimensions using molecular beam epitaxy of GaAs and Ga1−xAlxAs were fabricated.
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