scispace - formally typeset
Proceedings ArticleDOI

Simplify to survive: prescriptive layouts ensure profitable scaling to 32nm and beyond

Reads0
Chats0
TLDR
The time-to-market driven need to maintain concurrent process-design co-development, even in spite of discontinuous patterning, process, and device innovation, is reiterated and shortcomings in traditional Design for Manufacturability solutions are identified.
Abstract
The time-to-market driven need to maintain concurrent process-design co-development, even in spite of discontinuous patterning, process, and device innovation is reiterated. The escalating design rule complexity resulting from increasing layout sensitivities in physical and electrical yield and the resulting risk to profitable technology scaling is reviewed. Shortcomings in traditional Design for Manufacturability (DfM) solutions are identified and contrasted to the highly successful integrated design-technology co-optimization used for SRAM and other memory arrays. The feasibility of extending memory-style design-technology co-optimization, based on a highly simplified layout environment, to logic chips is demonstrated. Layout density benefits, modeled patterning and electrical yield improvements, as well as substantially improved layout simplicity are quantified in a conventional versus template-based design comparison on a 65nm IBM PowerPC 405 microprocessor core. The adaptability of this highly regularized template-based design solution to different yield concerns and design styles is shown in the extension of this work to 32nm with an increased focus on interconnect redundancy. In closing, the work not covered in this paper, focused on the process side of the integrated process-design co-optimization, is introduced.

read more

Citations
More filters
Journal ArticleDOI

Co-Optimization of Circuits, Layout and Lithography for Predictive Technology Scaling Beyond Gratings

TL;DR: This paper claims that a far superior result can be achieved by moving the design-to-manufacturing interface from design rules to a higher level of abstraction based on a defined set of pre-characterized layout templates and demonstrates how this methodology can simplify optical proximity correction and lithography processes for sub-32 nm technology nodes.
Proceedings ArticleDOI

Hybrid lithography optimization with E-Beam and immersion processes for 16nm 1D gridded design

TL;DR: This paper proposes a novel algorithm to optimally assign cuts to 193i or E-Beam processes with proper modifications on cut distribution in order to maximize the overall throughput and shows that the throughput is dramatically improved by the cut redistribution.
Proceedings ArticleDOI

Design and manufacturability tradeoffs in unidirectional and bidirectional standard cell layouts in 14 nm node

TL;DR: Comparison of the design efficiency and manufacturability of standard cell libraries that use either unidirectional or bidirectional Metal 1 shows that a 14 nm 9-track uniddirectional standard cell layout results in up to 20% lower energy-delay-area product as compared to the 9- track bid DirectionalStandard cell layout.
Journal ArticleDOI

Detailed Routing Algorithms for Advanced Technology Nodes

TL;DR: Algorithm for routing in advanced technology nodes, used by BonnRoute (BR) to obtain efficient and almost design rule clean wire packings and pin access solutions, and combines BR with an industrial router for cleaning up the remaining design rule violations.
Journal ArticleDOI

Single-Mask Double-Patterning Lithography for Reduced Cost and Improved Overlay Control

TL;DR: In this article, a shift-trim double-patterning lithography (ST-DPL) technique was proposed for achieving pitch relaxation with a single photomask, where the mask is re-used for the second exposure by applying a translational mask-shift.
References
More filters
Proceedings ArticleDOI

Layout impact of resolution enhancement techniques: impediment or opportunity?

TL;DR: This tutorial introduces the reader to the basic concepts of optical lithography, derives fundamental resolution limits, and explains the principles of resolution enhancement techniques and their impact on chip layout.
Proceedings ArticleDOI

Intel design for manufacturing and evolution of design rules

TL;DR: This paper will discuss the approach to DFM though co-optimization across design and process, where the poly layer is used to show how rules have changed to meet patterning requirements and how co- Optimization has been used to define the poly design rules.
Proceedings ArticleDOI

Convergent Automated Chip Level Lithography Checking and Fixing at 45nm

TL;DR: This paper shows how a design-oriented litho model was built and used to automate a litho hotspot fixing design flow, and the guidelines to the fixing tools in an industry based integrated flow were fed.
Related Papers (5)