Journal ArticleDOI
Some aspects of bias current tuning of W-band IMPATT diodes mounted in a reduced-height waveguide circuit
U. C. Ray,A. K. Gupta,M. N. Sen +2 more
Reads0
Chats0
TLDR
In this paper, the bias current tuning of W-band IMPATTs in reduced-height waveguide circuits has been discussed in details, and the measured tuning response can be increasing, decreasing or practically insensitive with bias current depending on the device and circuit parameters.Abstract:
The bias current tuning of W-band IMPATTs in reduced-height waveguide circuits have been discussed in details. The measured tuning response can be increasing, decreasing or practically insensitive with bias current depending on the device and circuit parameters. The observed results are explaine with a simple device-circuit interaction model.read more
Citations
More filters
Study of Various Tuning properties and Injection Locking of Resonant-cap IMPATT oscillator
TL;DR: In this article, a coherent study of tuning properties of resonant-cap IMPATT oscillator at Ka-band has been carried out by mechanical and electronic means, where an empirical relation is obtained between cap diameter and wavelength of the optimised resonant cap oscillator, which agrees well with theoretical relation.
Book ChapterDOI
Modeling and Simulation of Package Inductance for Pulsed IMPATT Diodes with Integrated Beam Lead Structure
TL;DR: In this paper, the authors introduced a novel analytical method based on HFSS software to predict the value of Package Impedance of a Beam Lead Structure as well as its dependence on dimensional parameters.
Journal ArticleDOI
Mechanical Tuning Properties of Waveguide-mounted Resonant-cap IMPATT Oscillator at Ka-band
TL;DR: In this article, the tuning properties of an indigenously developed resonant-cap continuous wave IMPATT oscillator at Ka-band by changing circuit susceptance through mechanical tuning were studied.
References
More filters
Journal ArticleDOI
Large-signal analysis of a silicon Read diode oscillator
D.L. Scharfetter,H.K. Gummel +1 more
TL;DR: In this article, the authors presented theoretical calculations of the large-signal admittance and efficiency achievable in a silicon p-n-v-ns Read IMPATT diode.
Journal ArticleDOI
A review of some charge transport properties of silicon
TL;DR: In this article, the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices, is reviewed, and most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties.
Journal ArticleDOI
Applications of scaling to problems in high-field electronic transport
TL;DR: In this paper, a general definition of the ionization coefficient and its behavior under scaling is determined and used to find a simple analytical expression in terms of physical parameters valid for all field strengths.
Journal ArticleDOI
Millimeter-Wave CW IMPATT Diodes and Oscillators
T.A. Midford,R.L. Bernick +1 more
TL;DR: In this article, the current state of the art of silicon CW millimeter-wave IMPATT diodes and oscillators in the frequency range from 30 to 250 GHz is summarized.
Journal ArticleDOI
Analysis and modelling of a coaxial-line/rectangular-waveguide junction
TL;DR: In this paper, the analysis of a commonly used coaxial-line/rectangular-waveguide junction, formed by the coaxial line entering the broad wall of the waveguide, is outlined.