Journal ArticleDOI
Structural and surface characterization of magnetron sputtered In1−xAlxN films grown on GaAs substrates
TLDR
In this article, structural and surface features of In1−xAlxN films grown on GaAs substrates with ZnO buffer layer by using reactive magnetron co-sputtering of Al and In targets in Ar-N2 at 100°C.About:
This article is published in Materials Letters.The article was published on 2015-09-01. It has received 5 citations till now. The article focuses on the topics: Sputtering & Crystallite.read more
Citations
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Journal ArticleDOI
A comparative study on the growth of InAlN films on different substrates
TL;DR: In this article, the growth of polycrystalline InAlN films on Si (111), sapphire (001), GaAs (100), and glass substrates was investigated.
Journal ArticleDOI
Effects of indium mole fraction on the physical characteristics of magnetron sputtered InxAl1−xN films
TL;DR: InxAl1−−xN films with composition 0.25 and 0.86 were grown on p-type Si (111) substrates by using reactive magnetron co-sputtering technique in an ambient of argon and nitrogen at 200°C as mentioned in this paper.
Journal ArticleDOI
Growth of AlInN film on GaAs substrate and its application to MSM UV photodetector
TL;DR: In this paper, the structural analysis revealed polycrystalline nature of the film with its preferred orientation along the (002) plane and the band gap of AlInN was estimated to be 3.39 eV from UV-vis reflectance measurements.
Journal ArticleDOI
Validity of Vegard's rule for Al1-xInxN (0.08<x<0.28) thin films grown on GaN templates
Sérgio Ricardo Magalhães,N. Franco,Ian Watson,Robert W. Martin,K.P. O'Donnell,Hpd Schenk,Fengzai Tang,T.C. Sadler,Menno J. Kappers,Rachel A. Oliver,Teresa Monteiro,Tomas L. Martin,Paj Bagot,Michael P. Moody,Eduardo Alves,Katharina Lorenz +15 more
TL;DR: In this paper, the lattice parameters of the alloys generally obey Vegard's rule, varying linearly with the InN fraction, within the limits of experimental accuracy, and in the compositional range 0.08 to 0.28, and this is consistent with the small deviation from linear behaviour suggested by Darakchieva et al.
Journal ArticleDOI
Low temperature produced calcium-doped zinc oxide thick film via screen printing technique as thermal interface material in LED application
TL;DR: In this article, pure and calcium-doped zinc oxide thick films were deposited on Aluminium substrate by screen printing technique using nanocrystalline powder synthesized from co-precipitation method.
References
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Journal ArticleDOI
X-ray diffraction of III-nitrides
Michelle A. Moram,M E Vickers +1 more
TL;DR: In this article, the basic principles of x-ray diffraction of thin films and areas of special current interest, such as analysis of non-polar, semipolar and cubic III-nitrides, are reviewed, along with the basic principle of X-ray diffusion of thin thin films, and some useful values needed in calculations, including elastic constants and lattice parameters.
Journal ArticleDOI
Single cuprous oxide films synthesized by radical oxidation at low temperature for PV application
TL;DR: X-ray diffraction measurements show that synthesized Cu( 2)O thin films grow on c-sapphire substrate with preferred (111) orientation, and the performance of Cu(2)O films is poorer compared to that ofCu(2),O using RF power of 0.1 V.
Journal ArticleDOI
Growth of ZnO films on GaAs substrates with a SiO2 buffer layer by RF planar magnetron sputtering for surface acoustic wave applications
Wen-Ching Shih,Mu-Shiang Wu +1 more
TL;DR: In this paper, the as-deposited ZnO films were characterized, using X-ray diffraction (XRD) and Xray rocking curve, scanning electron microscopy (SEM) and reflection high-energy electron diffraction(RHEED).
Journal ArticleDOI
Band gap bowing and refractive index spectra of polycrystalline AlxIn1−xN films deposited by sputtering
T. Peng,Joachim Piprek,G. Qiu,J. O. Olowolafe,Karl Unruh,Charles P. Swann,Erdmann Frederick Schubert +6 more
TL;DR: In this article, the authors measured the refractive index as well as the band gap across the entire compositional range of high-quality polycrystalline AlInN samples and observed strong band gap bowing.
Journal ArticleDOI
Progress in AlInN-GaN Bragg reflectors: Application to a microcavity light emitting diode
TL;DR: In this article, the authors report on the progress in the growth of highly reflective AlInN-GaN distributed Bragg reflectors deposited by metalorganic vapor phase epitaxy, which avoid strain related issues in the mirror while keeping a high refractive index contrast of about 7%.
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