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Structural properties of amorphous hydrogenated silicon using ab initio molecular dynamics simulations

TLDR
In this article, structural properties of amorphous hydrogenated silicon using molecular dynamics simulations were studied and the radial pair distribution functions for Si-Si, Si-H and H-H have been studied at 300 K and are found to be in good agreement with experimental data.
Abstract
We have studied structural properties of amorphous hydrogenated silicon usingab initio molecular dynamics simulations. A sample was generated by simulated annealing using periodic boundary conditions with a supercell containing 64 silicon and 8 hydrogen atoms. The radial pair distribution functions for Si-Si, Si-H and H-H have been studied at 300 K and are found to be in good agreement with experimental data. Our results show that hydrogen saturates the dangling bonds and reduces bond strain. We also report existence of Si-H-Si bridge sites which are likely to play an important role in understanding the light induced metastability in this material.

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Journal ArticleDOI

First-principles study of hydrogenated amorphous silicon

TL;DR: In this paper, a molecular-dynamics simulation within density-functional theory is used to prepare realistic structures of hydrogenated amorphous silicon, and the effect of cooling rate is examined.
Journal ArticleDOI

Sample dependence of the structural, vibrational, and electronic properties of a − Si : H : A density-functional-based tight-binding study

TL;DR: In this paper, the sample dependence of various properties of hydrogenated amorphous silicon (a-Si:H) was investigated using the density functional based tight binding molecular dynamics simulations.
Journal ArticleDOI

Geometries and vibrational spectra of small hydrogenated silicon clusters

TL;DR: In this article, a systematic study of ground state structures, vibrational spectra, cohesive energies and HOMO-LUMO gaps of small SinH clusters (n=3, 10) based on the nonorthogonal tight-binding molecular dynamics scheme was performed.
Journal ArticleDOI

Ground state structures and properties of Si3Hn (n = 1–6) clusters

TL;DR: In this article, the ground state structures and properties of Si3Hn (1 ≤n ≤ 6) clusters have been calculated using Car-Parrinello molecular dynamics with simulated annealing and steepest descent optimization methods.
Journal ArticleDOI

Equilibrium geometries and electronic structure of small silicon monohydrides clusters

TL;DR: In this article, the geometries and energies of small silicon monohydride clusters (Si2H-Si10H) have been systematically investigated by density functional theory (DFT) scheme with DZP++ basis sets.
References
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Journal ArticleDOI

Unified Approach for Molecular Dynamics and Density-Functional Theory

TL;DR: In this article, a unified scheme combining molecular dynamics and density-functional theory is presented, which makes possible the simulation of both covalently bonded and metallic systems and permits the application of density functional theory to much larger systems than previously feasible.
Journal ArticleDOI

Efficacious Form for Model Pseudopotentials

TL;DR: In this paper, a simple way has been discovered to put model pseudopotentials, $V(\stackrel{\ensuremath{\rightarrow}}{\mathrm{r}}), into a form which reduces the number of integrals required for an energy-band calculation from ϵ(n+1) to ϵ (n+2) for each $l$ in the sum.
Journal ArticleDOI

Pseudopotentials that work: From H to Pu

TL;DR: In this article, a consistent set of pseudopotentials has been developed for the entire Periodic Table, and a scheme used to generate the numerical potentials, the fitting procedure, and the testing of the fit are discussed.
Journal ArticleDOI

Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon

TL;DR: In this article, the authors show that long exposure to light decreases the photoconductivity and dark conductivity of some samples of hydrogenated amorphous silicon (a•Si':'H). Annealing above ∼150°C reverses the process.
Journal ArticleDOI

Hydrogen diffusion and electronic metastability in amorphous silicon

TL;DR: In this paper, the role of hydrogen diffusion and its role in the many electronic metastability phenomena in hydrogenated amorphous silicon (a-Si:H) is reviewed and the annealing of light-induced defects, the equilibration of defects and dopants, the stretched exponential relaxation kinetics, and the atomic structure formed during growth are all attributed to hydrogen diffusion.
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