Journal ArticleDOI
Surface characterization study of InP(100) substrates using ISS, AES and ESCA: comparison of substrates from two different commercial sources
Stuart J. Hoekje,Gar B. Hoflund +1 more
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TLDR
A surface characterization study using electron spectroscopy for chemical analysis (ESCA or XPS), Auger electron spectraopy (AES), and ion scattering spectraometry (ISS) has been performed on solvent-cleaned In(100) substrates supplied from two different commercial sources as mentioned in this paper.About:
This article is published in Applied Surface Science.The article was published on 1991-01-01. It has received 10 citations till now. The article focuses on the topics: Auger electron spectroscopy & Electron spectroscopy.read more
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Book ChapterDOI
Application of low energy ion scattering to oxidic surfaces
TL;DR: In this article, a low-energy ion scattering (LEIS) method was used for the determination of the atomic composition and structure of oxide surfaces, and the results showed that the equilibrium surfaces of these oxides are dominated by only one or two crystallographic planes.
Journal ArticleDOI
Chemical alteration of the native oxide layer on ligao2(001) by exposure to hyperthermal atomic hydrogen
John T. Wolan,Gar B. Hoflund +1 more
TL;DR: A surface characterization study using x-ray photoelectron spectroscopy (XPS) and ion scattering spectrum analysis (ISS) has been performed on polished, solvent-cleaned, undoped InP(111) substrates before and after room-temperature exposure to the flux produced by a novel atomic hydrogen source based on electron-stimulated desorption of hyperthermal (1-3 eV) hydrogen atoms from a Cu-alloy membrane.
Journal ArticleDOI
Characterization study of GaAs(001) surfaces using ion scattering spectroscopy and x-ray photoelectron spectroscopy
TL;DR: In this paper, a surface characterization study using ion scattering spectroscopy (ISS) and x-ray photoelectron spectroscopic (XPS) has been performed on solvent cleaned, n-type GaAs(001) substrates before and after cleaning by ion sputtering and annealing.
Journal ArticleDOI
Chemical reactions induced by the room temperature interaction of hyperthermal atomic hydrogen with the native oxide layer on GaAs(001) surfaces studied by ion scattering spectroscopy and x-ray photoelectron spectroscopy
TL;DR: In this paper, a surface characterization study using x-ray photoelectron spectroscopy (XPS) and ion scattering Spectroscopy has been performed on solvent-cleaned, n-type GaAs(001) substrates before and after room temperature exposure to the flux produced by a novel atomic hydrogen source based on electron-stimulated desorption of hyperthermal (∼ 1 eV) hydrogen atoms.
Journal ArticleDOI
Composition and morphology of InP{100} surfaces as a function of low energy Ar+ bombardment and annealing
TL;DR: In this paper, the surface composition and morphology of the InP{001} surface have been studied by in situ Auger electron spectroscopy (AES) and ex situ atomic force microscopy (AFM) as a function of Ar + ion bombardment energy over the range 5 eV to 500 eV and annealing temperatures up to 600°C.
References
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Journal ArticleDOI
Smoothing and Differentiation of Data by Simplified Least Squares Procedures.
Journal ArticleDOI
The evaporation of InP under Knudsen (equilibrium) and Langmuir (free) evaporation conditions
TL;DR: In this article, the evaporation of InP under Knudsen and Langmuir conditions was investigated mass-spectrometrically using a modulated molecular beam technique combined with phase-sensitive detection and signal averaging to separate evaporating species from background species in the vacuum system.
Journal ArticleDOI
Auger electron beam effects on electrical properties and surface composition of InP surfaces
TL;DR: In this paper, the InP composition and work function variations obtained by Auger electron spectroscopy and the Kelvin method were analyzed and the spurious effects of the electron beam were shown.
Journal ArticleDOI
A characterization study of the native Oxide layer formed on chemically Etched InP (111)
Gar B. Hoflund,Cheryl F. Corallo +1 more
TL;DR: In this article, angle-resolved ESCA has been used to characterize the native oxide layer formed on the chemically polished and etched InP (111) surface, and it is estimated that this oxide layer is about 30 A thick and forms a sharp interface at the oxide/InP boundary.
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