Journal ArticleDOI
Surface Passivation of Crystalline and Polycrystalline Silicon Using Hydrogenated Amorphous Silicon Oxide Film
Jaran Sritharathikhun,Chandan Banerjee,Michio Otsubo,Tsutomu Sugiura,Hiroshi Yamamoto,Takehiko Sato,Amornrat Limmanee,Akira Yamada,Makoto Konagai +8 more
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TLDR
In this paper, excellent passivation properties of hydrogenated amorphous silicon oxide (a-SiOx:H) prepared by very high frequency plasmaenhanced chemical vapor deposition (VHF PECVD) at a low substrate temperature (170 °C) on crystalline and polycrystalline silicon (Si) wafers are reported.Abstract:
Excellent passivation properties of hydrogenated amorphous silicon oxide (a-SiOx:H) prepared by very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) at a low substrate temperature (170 °C) on crystalline and polycrystalline silicon (Si) wafers are reported. Films were characterized by ellipsometry, Fourier transform infrared spectroscopy (FTIR), ultraviolet–visible (UV–vis) spectrophotometry, and dark-conductivity and photoconductivity measurements. A comparison of the results with those for different passivation layers such as hydrogenated amorphous silicon carbon nitride (a-SiCxNy:H), hydrogenated amorphous silicon nitride (a-SiNx:H), and hydrogenated amorphous silicon (a-Si:H) reveals their superiority as an excellent passivation layer for p-type crystalline Si as well as polycrystalline Si. A maximum effective lifetime of 400 µs was measured for 1–10 Ω cm, 380-µm-thick p-type c-Si using a micro-photocurrent decay (µ-PCD) system. Fixed charge density (Qf) was estimated by high-frequency (1 MHz) capacitance–voltage measurement using a metal–insulator–silicon structure (CV-MIS). The effect of annealing temperature on surface passivation in a nitrogen atmosphere was also studied.read more
Citations
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Journal ArticleDOI
High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition
TL;DR: In this article, the a-Al1-xOx:H films were deposited by plasma-enhanced chemical vapor deposition (PECVD) using a mixture of trimethylaluminum (TMA), carbon dioxide (CO2), and hydrogen (H2) at a low substrate temperature of about 200 °C.
Journal ArticleDOI
Optimization of Amorphous Silicon Oxide Buffer Layer for High-Efficiency p-Type Hydrogenated Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells
TL;DR: Czochralski et al. as mentioned in this paper found that the oxygen concentration in the i-a-SiO:H buffer layer strongly affected the solar cell performance and that the short wavelength response in quantum efficiency (QE) was improved by oxygen addition.
Journal ArticleDOI
High-efficiency Silicon Solar Cells: A Review
TL;DR: In this paper, the authors discuss key issues, cell concepts, and the status of recent high-efficiency crystalline silicon solar cells, and discuss the potential of Si cells for photovoltaic devices.
Journal ArticleDOI
Optimization of p-Type Hydrogenated Microcrystalline Silicon Oxide Window Layer for High-Efficiency Crystalline Silicon Heterojunction Solar Cells
TL;DR: Czochralski et al. as discussed by the authors investigated the effect of p-µc-SiO:H window layer thickness on HJ solar cells by changing deposition time and silane (SiH4) flow rate.
Journal ArticleDOI
Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure
Shiyong Liu,Xiangbo Zeng,Wenbo Peng,Haibo Xiao,Wenjie Yao,Xiaobing Xie,Chao Wang,Zhanguo Wang +7 more
TL;DR: In this article, a double-layer p-type hydrogenated nanocrystalline silicon (pnc-Si:H) structure consisting of a low hydrogen diluted i/p buffer layer and a high hydrogen diluted p-layer was developed to improve the hydrogenated amorphous silicon n-i-p solar cells.
References
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Journal ArticleDOI
Surface passivation of crystalline silicon solar cells: a review
TL;DR: A review of surface passivation methods used since the 1970s, both on laboratory-type as well as industrial cells is presented in this paper, where a p-n junction and the subsequent passivation of the resulting silicon surface with plasma silicon nitride are presented.
Journal ArticleDOI
HITTM cells—high-efficiency crystalline Si cells with novel structure
Mikio Taguchi,Kunihiro Kawamoto,Sadaji Tsuge,Toshiaki Baba,Hitoshi Sakata,Masashi Morizane,Kenji Uchihashi,Noboru Nakamura,Seiichi Kiyama,Osamu Oota +9 more
TL;DR: Sanyo et al. as discussed by the authors improved the junction properties of the a-Si/c-Si heterojunction and achieved 20.1% efficiency for a cell size of 101 cm2.
Journal ArticleDOI
SHORT COMMUNICATION: ACCELERATED PUBLICATION: Multicrystalline silicon solar cells exceeding 20% efficiency
TL;DR: In this article, the authors presented the first conversion efficiency above 20% for a multicrystalline silicon solar cell, where the application of wet oxidation for rear surface passivation significantly reduced the process temperature and therefore prevented the degradation of minority-carrier lifetime.
Journal ArticleDOI
Obtaining a higher Voc in HIT cells
TL;DR: In this article, the surface passivation at the a-Si/c-Si heterointerface realized by Sanyo's successful technologies for fabricating high-quality aSi films and solar cells with low plasma damage processes is investigated.
Journal ArticleDOI
Optical and bonding model for non-crystalline SiOx and SiOxNy materials
TL;DR: In this article, optical properties of non-crystalline SiOx materials are analyzed for the energy region 1 to 26 eV and the results indicate that amorphous substances of all intermediate compositions between Si and SiO2 can be formed and that these materials are not simple mixtures of particles of Si and siO2 but rather the two atom species are blended on an atomic scale.
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