Journal ArticleDOI
Surfaces of silicon
TLDR
In this paper, the current state of knowledge of the structure and surface states of several clean low-index faces of silicon is reviewed, including the (100) face, (111) 7*7 face, the ( 111) 1*1 face, and the (112) 2*1 cleavage face.Abstract:
The author reviews the current state of knowledge of the structure and surface states of several clean low-index faces of silicon. These are the (100) face, the (111) 7*7 face, the (111) 1*1 face and the (111) 2*1 cleavage face. A new model for the latter is also proposed. Aided particularly by scanning tunneling microscopy results there appears to be grounds for some confidence that the structures of most of the above reconstructed surfaces are now understood. In addition to reviewing results from a variety of experimental techniques used on clean surfaces, results for gas covered and metal covered surfaces are also summarised.read more
Citations
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Journal ArticleDOI
Surface X‐Ray Diffraction
Ian K. Robinson,D J Tweet +1 more
TL;DR: In this paper, a general introduction to x-ray diffraction and its application to the study of surfaces and interfaces is presented, illustrated through five different techniques: crystal truncation rod analysis, two-dimensional crystallography, three-dimensional structure analysis, the evanescent wave method and lineshape analysis.
Journal ArticleDOI
Surface structure determination by X-ray diffraction
TL;DR: In this article, the basic principles, the necessary instrumentation and show examples of successful structure determinations for X-ray diffraction has become an important tool for studying surfaces, focusing on the semiconductor (111) surfaces.
Journal ArticleDOI
Hydrogen desorption from the monohydride phase on Si(100)
Kumar Sinniah,Michael G. Sherman,Lisa B. Lewis,W. Henry Weinberg,John T. Yates,Kenneth C. Janda +5 more
TL;DR: In this paper, it was shown that the rate limiting step of the reaction is the promotion of a hydrogen atom from a localized bonding site to a delocalized band state, which then reacts with a localized atom to produce molecular hydrogen which desorbs.
Journal ArticleDOI
Machine Learning a General-Purpose Interatomic Potential for Silicon
TL;DR: In this article, a Gaussian approximation potential for silicon is presented, which can accurately reproduce density-functional-theory reference results for a wide range of observable properties, including crystal, liquid, and amorphous bulk phases, as well as point, line, and plane defects.
Journal ArticleDOI
Semiconductor Surface Reconstruction: The Structural Chemistry of Two-Dimensional Surface Compounds.
TL;DR: The purpose of this article is to provide an overview of the surface structures of the clean surfaces of tetrahedrally coordinated semiconductors within the context of identifying the main features of their structural chemistry.
References
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Journal ArticleDOI
Theory of the scanning tunneling microscope
Jerry Tersoff,D. R. Hamann +1 more
TL;DR: In this paper, a metal tip is scanned along the surface while ad justing its height to maintain constant vacuum tunneling current, and a contour map of the surface is generated.
Journal ArticleDOI
Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond Structure
TL;DR: In this paper, the Born-Huang procedure is applied to the calculation of the elasticity of a two-constant model of the diamond type of crystal, and this predicts the relation
Journal ArticleDOI
7 × 7 Reconstruction on Si(111) Resolved in Real Space
TL;DR: In this paper, a modified adatom model with 12 adatoms per unit cell and an inhomogeneously relaxed underlying top layer was used for Si(111) reconstruction.
Book ChapterDOI
Theory of the scanning tunneling microscope
Jerry Tersoff,D. R. Hamann +1 more
TL;DR: A theory for tunneling between a real surface and a model probe tip, applicable to the recently developed "scanning tunneling microscope" is presented and it is concluded that for the AuOlO measurements the experimental "image" is relatively insensitive to the positions of atoms beyond the first atomic layer.
Journal ArticleDOI
Structural analysis of Si(111)‐7×7 by UHV‐transmission electron diffraction and microscopy
TL;DR: In this article, a new structural model of Si(111)•7×7 is derived by TED intensity analysis, which consists of 12 adatoms arranged locally in the 2×2 structure, nine dimers on the sides of the triangular subunits of the 7×7 unit cell and a stacking fault layer.