Journal ArticleDOI
Temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers
TLDR
In this article, the threshold current and its temperature (T) dependence in the range 200-400 K for AlGaAs quantum well lasers with 25-A wide GaAs wells using a model which includes lifetime broadening of the transitions and broadening the density of states function by fluctuations in the well width.Abstract:
We have calculated the threshold current and its temperature (T) dependence in the range 200–400 K for AlGaAs quantum well lasers with 25‐A‐wide GaAs wells using a model which includes lifetime broadening of the transitions and broadening of the density of states function by fluctuations in the well width. The threshold current varies approximately linearly with T and the principal effect of broadening is to increase the threshold current causing a reduction in the fractional change of current with temperature. The apparent value of the parameter T0 is increased to ≊400 K, compared with ≊320 K without broadening. The calculations are compared with experimental data.read more
Citations
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Journal ArticleDOI
Valence band engineering in strained-layer structures
TL;DR: In this paper, the authors discuss the theoretical and experimental limits on good quality growth of strained-layer superlattices and discuss the possibility of valence band engineering in strained layers.
Journal ArticleDOI
A model for GRIN-SCH-SQW diode lasers
TL;DR: In this paper, a comprehensive model for graded-index, separate-confinement-heterostructure, singlequantum-well (GRIN-SCH-SQW) Al/sub x/Ga/sub 1-x/As diode lasers is presented, and compared with experimental data.
Journal ArticleDOI
A systems perspective on digital interconnection technology
Ronald A. Nordin,A. F. J. Levi,Richard N. Nottenburg,J. O'Gorman,Tawee Tanbun-Ek,R. A. Logan +5 more
TL;DR: In this paper, the authors evaluate the optimal packaging and interconnection technology that should be used in future system designs, and suggest that parallel optical data links based on a laser array technology implemented at the board-to-board level are presently advantageous.
Journal ArticleDOI
Measurement and calculation of spontaneous recombination current and optical gain in GaAs-AlGaAs quantum-well structures
TL;DR: In this paper, the peak optical gain as a function of spontaneous recombination current density for GaAs quantum wells of width 25 and 58 A bounded by AlGaAs barriers was determined from measurements of spontaneous emission spectra, observed through narrow windows in the 50μm wide contact stripes of oxide isolated lasers, using only a single reference value of the optical absorption coefficient above the band edge to calibrate the measurements in absolute units.
Journal ArticleDOI
Band filling in GaAs/AlGaAs multiquantum well lasers and its effect on the threshold current
TL;DR: In this article, an improved model for multi-quantum-well laser operation is presented, which includes the effects of band nonparabolicity, revised band offsets at the heterojunction interface, nonradiative processes in the barrier and waveguide regions, and the energy-dependent spectral linewidth.
References
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Journal ArticleDOI
Gain and intervalence band absorption in quantum-well lasers
TL;DR: In this article, the authors analyzed the electronic dipole moment in quantum-well structures and derived the linear gain taking into account the intraband relaxation, and showed that the effects of the intrusion relaxation are 1) shift of the gain peak toward shorter wavelength with increasing injected carrier density even in quantum well structures, 2) increase of gain spectrum width due to softening of the profile, and 3) reduction in the maximum gain by 30-40 percent.
Journal ArticleDOI
Dimensionality dependence of the band-gap renormalization in two- and three-dimensional electron-hole plasmas in GaAs
TL;DR: In this article, the authors investigated the band-gap renormalization due to many-body effects in electron-hole plasmas in 2D GaAS-GaAlAs multiple quantum-well structures.
Journal ArticleDOI
Temperature dependence of threshold current for quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes
TL;DR: In this paper, the threshold current density of quantum-well AlxGa1−xAs−GaAs heterostructure laser diodes, grown by MO•CVD, is shown to be less temperature dependent than that of conventional DH lasers.
Journal ArticleDOI
Calculated threshold current of GaAs quantum well lasers
TL;DR: In this article, a model calculation of the threshold current of a laser in a quantum well structure is presented, where the band-to-band radiative recombination rate is calculated using a constant density of states and the k-selection rule.
Journal ArticleDOI
Threshold currents for AlGaAs quantum well lasers
TL;DR: In this article, the threshold currents for AlGaAs quantum well lasers were studied theoretically and the structure dependent gain coefficient was obtained by taking into account the electron distribution in L valleys.