Journal ArticleDOI
Test-Architecture Optimization and Test Scheduling for TSV-Based 3-D Stacked ICs
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TLDR
This paper addresses test architecture optimization for 3-D stacked ICs implemented using TSVs and shows that shorter test lengths are generally achieved with the larger, more complex dies lower in the stack.Abstract:
Through-silicon via (TSV)-based 3-D stacked ICs (SICs) are becoming increasingly important in the semiconductor industry. In this paper, we address test architecture optimization for 3-D stacked ICs implemented using TSVs. We consider two cases, namely 3-D SICs with die-level test architectures that are either fixed or still need to be designed. We next present mathematical programming techniques to derive optimal solutions for the architecture optimization problem for both cases. Experimental results for three handcrafted 3-D SICs comprising of various systems-on-a-chip (SoCs) from the ITC'02 SoC test benchmarks show that compared to the baseline method of sequentially testing all dies, the proposed solutions can achieve significant reduction in test length. This is achieved through optimal test schedules enabled by the test architecture. We also show that increasing the number of test pins typically provides a greater reduction in test length compared to an increase in the number of test TSVs. Furthermore, we show that shorter test lengths are generally achieved with the larger, more complex dies lower in the stack. This is because test data must pass through every die lower in a stack in order to reach its target die, and with the larger dies lower in the stack, more test bandwidth may be provided to these dies using fewer routing resources.read more
Citations
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Journal ArticleDOI
An overview of through-silicon-via technology and manufacturing challenges
TL;DR: A comprehensive overview of through-silicon-via technology (TSV) is presented, including etch, insulation, and metallization, along with the backside processing, assembly, metrology, design, packaging, reliability, testing and yield challenges that arise with the use of TSVs.
Proceedings ArticleDOI
TSV defects and TSV-induced circuit failures: The third dimension in test and design-for-test
TL;DR: In this paper, the authors present an overview of TSV-related defects and the impact of TSVs in the form of new defects in devices and interconnects, and describe recent advances in testing, diagnosis, and design-for-testability for 3D ICs and techniques for defect tolerance using redundancy and repair.
Proceedings ArticleDOI
Identification of Defective TSVs in Pre-Bond Testing of 3D ICs
TL;DR: An efficient algorithm is described for designing parallel TSV test sessions such that test time is reduced and a given number of faulty TSVs within the TSV network can be uniquely identified.
Journal ArticleDOI
TSV Extracted Equivalent Circuit Model and an On-Chip Test Solution
Zheng Gong,Rashid Rashidzadeh +1 more
TL;DR: A new method utilizing computer-aided design tools to extract circuit models for prebond and postbond TSVs is presented, indicating that even a relatively large void does not alter the TSV characteristic parameters and thus voids remain largely undetected with conventional test solutions.
Journal ArticleDOI
Test-Cost Modeling and Optimal Test-Flow Selection of 3-D-Stacked ICs
TL;DR: A generic cost model is proposed to account for various test costs involved in 3-D integration and a formal representation of the solution space is presented to minimize the overall cost to solve the cost-minimization problem.
References
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Demystifying 3D ICs: the pros and cons of going vertical
W.R. Davis,John W. Wilson,S. Mick,Jian Xu,Hao Hua,C. Mineo,A.M. Sule,Michael B. Steer,Paul D. Franzon +8 more
TL;DR: In this paper, the authors present a high-level discussion of the pros and cons of 3D technologies, with an analysis relating the number of transistors on a chip to the vertical interconnect density using estimates based on Rent's rule.
Journal ArticleDOI
8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology
Uk-Song Kang,Hoe-ju Chung,Seongmoo Heo,Soon-Hong Ahn,Hoon Lee,Sooho Cha,Jaesung Ahn,Duk-Min Kwon,Jin-Ho Kim,Jae-Wook Lee,Han-Sung Joo,Woo-Seop Kim,Hyun-Kyung Kim,Eun-Mi Lee,So-Ra Kim,Keum-Hee Ma,Dong-Hyun Jang,Nam-Seog Kim,Man-Sik Choi,Sae-Jang Oh,Jung-Bae Lee,Tae-Kyung Jung,Jei-Hwan Yoo,Chang-Hyun Kim +23 more
TL;DR: An 8 Gb 4-stack 3-D DDR3 DRAM with through-Si-via is presented which overcomes the limits of conventional modules and the proposed TSV check and repair scheme can increase the assembly yield up to 98%.
Journal ArticleDOI
Performance Bounds for Level-Oriented Two-Dimensional Packing Algorithms
TL;DR: This work analyzes several “level-oriented” algorithms for packing rectangles into a unit-width, infinite-height bin and gives more refined bounds for special cases in which the widths of the given rectangles are restricted and in which only squares are to be packed.
Journal ArticleDOI
Test wrapper and test access mechanism co-optimization for system-on-chip
TL;DR: An efficient algorithm to construct wrappers that reduce the testing time for cores is presented and a new enumerative method for TAM optimization is presented that reduces execution time significantly when the number of TAMs being designed is small.
Journal ArticleDOI
Design space exploration for 3D architectures
TL;DR: A brief introduction to 3D integration technology is given, the EDA design tools that can enable the adoption of 3D ICs are discussed, and the implementation of various microprocessor components using 3D technology is presented.
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