Journal ArticleDOI
The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements
TLDR
In this article, the electron and hole impact ionization coefficients in (100) GaAs have been determined using photomultiplication measurements performed on specially fabricated p+-n diode structures having active region carrier concentrations from 1.1 X 1017 to 2.2 X 1015 cm-3.Abstract:
The electron and hole impact ionization coefficients in (100) GaAs have been determined using photomultiplication measurements performed on specially fabricated p+-n diode structures having active region carrier concentrations from 1.1 X 1017 to 2.2 X 1015 cm-3. These structures are designed to permit pure electron and hole injection in the same diodes. In diodes having heavy p+ doping, the effects of electron dead space have been observed. This dead-space region corresponds to the distance required for an injected carrier to accelerate ballistically to the impact ionization threshold energy, and a method to include this phenomenon in the calculation of α and β from the experimental multiplication data is presented. Agreement among the results from all these structures is obtained with an electron threshold energy of 1.7 eV, and the corrected data are also in agreement with data obtained from device structures designed to eliminate dead-space effects. The measured ratio of α/β in GaAs is found to decrease from 2.4 at 2.2 X 105 V/cm to 1.0 at 6.25 X 105 V/cm. Avalanche noise measurements performed at 30 MHz on the same devices under both electron and hole injection yield a keff of 0.6 and a k'eff of 1.7, respectively, in agreement with the values of these parameters obtained from the photocurrent results.read more
Citations
More filters
Journal ArticleDOI
Negative capacitance at metal-semiconductor interfaces
X. Wu,E. S. Yang,H. L. Evans +2 more
TL;DR: In this paper, a modified Shockley-Read treatment is proposed to interpret the experimental observations and a two energy level simplified model is presented to simulate the capacitance spectrum, which is in good agreement with the experimental data.
Journal ArticleDOI
Avalanche multiplication noise characteristics in thin GaAs p/sup +/-i-n/sup +/ diodes
TL;DR: Avalanche noise measurements have been performed on a range of homojunction GaAs p/sup +/-i-n/sup +/ and n/sup ±i-p/sup+/ diodes with "i" region widths, /spl omega/ from 2.61 to 0.05 /spl mu/m as mentioned in this paper.
Journal ArticleDOI
Avalanche photodiodes with an impact-ionization-engineered multiplication region
TL;DR: In this paper, an impactionization-engineered structure for the multiplication region of avalanche photodiodes is presented, which achieves high gain, low dark current, and very low noise.
Journal ArticleDOI
A Monte Carlo investigation of multiplication noise in thin p/sup +/-i-n/sup +/ GaAs avalanche photodiodes
TL;DR: In this article, a Monte Carlo (MC) model was used to estimate the excess noise factor in thin p/sup +/-i-n/sup +/ GaAs avalanche photodiodes (APD's).
Journal ArticleDOI
Investigation of impact ionization in thin GaAs diodes
S.A. Plimmer,John P. R. David,D. C. Herbert,T.-W. Lee,G.J. Rees,Peter A. Houston,R. Grey,P.N. Robson,A.W. Higgs,D.R. Wight +9 more
TL;DR: In this article, the electron and hole multiplication coefficients in thin GaAs homojunction PIN and NIP diodes have been determined using a semianalytical solution of the Boltzmann equation.